参数资料
型号: MPF960
厂商: ON SEMICONDUCTOR
元件分类: 小信号晶体管
英文描述: 2000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AE
封装: CASE 29-05, TO-92, 3 PIN
文件页数: 3/4页
文件大小: 129K
代理商: MPF960
MPF930
http://onsemi.com
3
,DRAIN
CURRENT
(AMPS)
D(on)I
,DRAIN
CURRENT
(AMPS)
D(on)I
Figure 3. On Voltage versus Temperature
Figure 4. Capacitance Variation
Figure 5. Transfer Characteristic
Figure 6. Output Characteristic
VGS = 10 V
VDS, DRAINSOURCE VOLTAGE (VOLTS)
VGS, GATESOURCE VOLTAGE (VOLTS)
10
5.0
2.0
1.0
0.5
0.2
0.1
,DRAINSOURCE
VOL
TAGE
(VOL
TS)
55
15
25
65
105
0
0.9
0.6
0.3
1.2
1.8
1.5
,DRAIN
CURRENT
(AMPS)
D(on)I
0
1.0
2.0
3.0
4.0
5.0
VDS, DRAINSOURCE VOLTAGE (VOLTS)
2.4
2.1
1.2
0.8
0.4
1.6
2.4
2.0
2.8
6.0
7.0
8.0
9.0
10
0
5.0
10
20
30
40
C,
CAP
ACIT
ANCE
(pF)
145
35
+5.0
45
85
125
TJ, JUNCTION TEMPERATURE (°C)
0
10
203040
0
60
40
20
80
120
100
160
140
200
180
V
DS
5.0
0
VGS = 0 V
Coss
Ciss
Crss
VDS = 10 V
9.0 V
8.0 V
7.0 V
6.0 V
5.0 V
4.0 V
VGS = 10 V
Figure 7. Saturation Characteristic
VDS, DRAINSOURCE VOLTAGE (VOLTS)
1.2
0.8
0.4
1.6
2.4
2.0
2.8
1.0
2.0
3.0
4.0
5.0
0.5
0
0.2
VGS = 10 V
9.0 V
8.0 V
7.0 V
6.0 V
5.0 V
4.0 V
3.0 V
相关PDF资料
PDF描述
MPF930 2000 mA, 35 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AE
MPG06J-E3 1 A, 600 V, SILICON, SIGNAL DIODE
MPL1TR 3000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR
MPL1TL 3000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR
MPM3013 25 A, 60 V, 0.04 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
相关代理商/技术参数
参数描述
MPF990 功能描述:MOSFET N-CH 90V 2A TO-92 RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
MPFA403PMJ22BA 制造商:ALLEN 功能描述:AC SERVI NITIR
MPF-A403P-MJ22BA 制造商:ALLEN 功能描述:AC SERVI NITIR
MP-FB 制造商:SYSTEMSENSOR 制造商全称:SYSTEMSENSOR 功能描述:Speakers
MPFB430PSJ22BA 制造商:Allen Bradley 功能描述:4-Day Delivery