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参数资料
| 型号： | MPK02N6 |
| 厂商： | MICRO COMMERCIAL COMPONENTS |
| 元件分类： | JFETs |
| 英文描述： | 1 A, 600 V, 7.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-92 |
| 文件页数： | 2/2页 |
| 文件大小： | 78K |
| 代理商： | MPK02N6 |
MPK02N6
Electrical Characteristics T
J=25℃
℃
℃ unless otherwise notes
Off Characteristics
Symbol
Parameter
Test Condition
Min.
Typ. Max. Unit
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250A
600
V
Zero Gate Voltage Drain Current
VDS = 600V, VGS = 0V
1
μA
IDSS
Zero Gate Voltage Drain Current
(TJ=125℃)
VDS = 600V, VGS = 0V
50
μA
IGSSF
Forward Gate Body
Leakage Current
VGS = 30V, VDS = 0V
100
nA
IGSSR
Reverse Gate Body
Leakage Current
VGS = -30V, VDS = 0V
-100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 250A
2
-
4
V
RDS(on) Static Drain-Source On-Resistance
VGS = 10V, ID = 0.5A
7
7.5
gFS
a
Forward Transconductance
VDS = 15V, ID = 0.5A
1
S
Dynamic Characteristics
Ciss
Input Capacitance
156
Coss
Output Capacitance
23.5
Crss
Reverse Transfer Capacitance
VDS = 25V,
VGS = 0V,
f = 1.0 MHz
3.8
pF
Switching Characteristics
td(on)
Turn-On Delay Time
6.5
tr
Turn-On Rise Time
5
td(off)
Turn-Off Delay Time
19
tf
Turn-Off Fall Time
VDD = 300V,
ID = 0.5A,
VGS = 10V,
RGEN = 4.7Ω
25
ns
Qg
Total Gate Charge
7
Qgs
Gate-Source Charge
1.1
Qgd
Gate-Drain Charge
VDS = 480V, ID = 1A,
VGS = 10V, RGEN = 4.7Ω
3.7
nC
Drain-Source Diode Characteristics
IS
Drain-Source Diode Forward
Continuous Current
V
GS = 0V
1
A
ISM
b
Drain-Source Diode Pulsed Current
V
GS = 0V
4
A
VSD
a
Drain-Source Diode Forward Voltage
VGS = 0V, IS = 1A
1.6
V
Trr
Reverse Recovery Time
140
ns
Qrr
Reverse Recovery Charge
IS=1A,
VDD=25V,dIF=100A/us
240
nC
Notes :
a. Pulsed Test: Pulse Width = 300s, Duty Cycle = 1.5%.
b. Pulsed width limited by safe operating area.
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