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参数资料
| 型号： | MPS2222 |
| 厂商： | MICRO COMMERCIAL COMPONENTS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 600 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 2/2页 |
| 文件大小： | 70K |
| 代理商： | MPS2222 |
MCC
Revision: 3
2007/03/02
TM
Micro Commercial Components
www.mccsemi.com
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相关PDF资料 |
PDF描述 |
|---|---|
| MPS2222-H | 600 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPS2222A-AP | 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPS2222A-BP | 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPS2222A/E7 | 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-226AA |
| MPS2222A | 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-226AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MPS2222_07 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:General Purpose Transistors |
| MPS2222A | 功能描述:两极晶体管 - BJT 600mA 75V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MPS2222A-BULKS | 功能描述:两极晶体管 - BJT NPN General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MPS2222ACRLRP | 功能描述:两极晶体管 - BJT 600mA 75V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MPS2222ACRLRPG | 功能描述:两极晶体管 - BJT 600mA 75V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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