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参数资料
| 型号： | MPS2222A-TAP |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 2/6页 |
| 文件大小： | 95K |
| 代理商： | MPS2222A-TAP |
www.vishay.com
2
Document Number 85127
Rev. 1.2, 02-Nov-04
VISHAY
MPS2222A
Vishay Semiconductors
Electrical DC Characteristics
1) Pulse test: pulse width
≤ 300 s, cycle ≤ 2 %
Electrical AC Characteristics
Parameter
Test condition
Symbol
Min
Typ
Max
Unit
DC current gain
VCE = 10 V, IC = 0.1 mA
hFE
35
VCE = 10 V, IC = 1 mA
hFE
50
VCE = 10 V, IC = 10 mA
hFE
75
hFE
35
VCE = 10 V, IC = 150 mA
1)
hFE
100
300
VCE = 1.0 V, IC = 150 mA
1)
hFE
50
VCE = 10 V, IC = 500 mA
1)
hFE
40
Collector - base breakdown
voltage
IC = 10 A, IE = 0
V(BR)CBO
75
V
Collector - emitter breakdown
voltage 1)
IC = 10 mA, IB = 0
V(BR)CEO
40
V
Emitter - base breakdown
voltage
IE = 10 A, IC = 0
V(BR)EBO
6.0
V
Collector - emitter saturation
voltage 1)
IC = 150 mA, IB = 15 mA
VCEsat
0.3
V
IC = 500 mA, IB = 50 mA
VCEsat
1.0
V
Base - emitter saturation voltage
IC = 150 mA, IB = 15 mA
VBEsat
0.6
1.2
V
IC = 500 mA, IB = 50 mA
VBEsat
2.0
V
Collector-emitter cut-off current
VEB = 3 V, VCE = 60 V
ICEV
10
nA
Collector-base cut-off current
VCB = 60 V, IE = 0
ICBO
0.01
A
VCB = 50 V, IE = 0, TA = 125 °C
ICBO
10
A
Emitter-base cut-off current
VEB = 3 V, IC = 0
IEBO
100
nA
Base cut - off current
VCE = 60 V, VEB = 3.0 V
IBL
20
nA
Parameter
Test condition
Symbol
Min
Typ
Max
Unit
Input impedance
VCE = 10 V, IC = 1 mA, f = 1 kHz
hie
2.0
8.0
k
VCE = 10 V, IC = 10 mA, f = 1 kHz
hie
0.25
1.25
k
Voltage feedback ratio
VCE = 10 V, IC = 1 mA, f = 1 kHz
hre
8 x 10-4
VCE = 10 V, IC = 10 mA, f = 1 kHz
hre
4 x 10-4
Current gain - bandwidth
product
VCE = 20 V, IC = 20 mA,
f = 100 MHz
fT
300
MHz
Output capacitance
VCB = 10 V, f = 1 MHz, IE = 0
COBO
8.0
pF
Input capacitance
VEB = 0.5 V, f = 1 MHz, IC = 0
CIBO
25
pF
Output admittance
VCE = 10 V, IC = 1 mA, f = 1 kHz
hoe
5.0
35
S
VCE = 10 V, IC = 10 mA, f = 1 kHz
hoe
25
200
S
Small signal current gain
VCE = 10 V, IC = 1 mA, f = 1 kHz
hfe
50
300
VCE = 10 V, IC = 10 mA, f = 1 kHz
hfe
75
375
Collector base time constant
IE = 20 mA, VCB = 20 V, f = 31.8
MHz
rb’CC
150
ps
Noise figure
VCE = 10 V, IC = 100 A,
RS = 1 k, f = 1 kHz
NF
4.0
dB
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MPS2222AZL1 | 功能描述:两极晶体管 - BJT 600mA 75V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MPS2222AZL1G | 功能描述:两极晶体管 - BJT 600mA 75V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MPS2222G | 功能描述:两极晶体管 - BJT 600mA 60V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MPS2222-H | 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:NPN General Purpose Amplifier |
| MPS2222-L | 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:NPN General Purpose Amplifier |
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