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参数资料
| 型号： | MPS2222RL |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 600 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | PLASTIC, TO-226AA, 3 PIN |
| 文件页数： | 12/36页 |
| 文件大小： | 388K |
| 代理商： | MPS2222RL |
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MPS2222 MPS2222A
2–535
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc, TA = –55°C)
MPS2222A only
(IC = 150 mAdc, VCE = 10 Vdc)(1)
(IC = 150 mAdc, VCE = 1.0 Vdc)(1)
(IC = 500 mAdc, VCE = 10 Vdc)(1)
MPS2222
MPS2222A
hFE
35
50
75
35
100
50
30
40
—
300
—
Collector – Emitter Saturation Voltage(1)
(IC = 150 mAdc, IB = 15 mAdc)
MPS2222
MPS2222A
(IC = 500 mAdc, IB = 50 mAdc)
MPS2222
MPS2222A
VCE(sat)
—
0.4
0.3
1.6
1.0
Vdc
Base – Emitter Saturation Voltage(1)
(IC = 150 mAdc, IB = 15 mAdc)
MPS2222
MPS2222A
(IC = 500 mAdc, IB = 50 mAdc)
MPS2222
MPS2222A
VBE(sat)
—
0.6
—
1.3
1.2
2.6
2.0
Vdc
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product(2)
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)
MPS2222
MPS2222A
fT
250
300
—
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
—
8.0
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
MPS2222
MPS2222A
Cibo
—
30
25
pF
Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
MPS2222A
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
MPS2222A
hie
2.0
0.25
8.0
1.25
k
Voltage Feedback Ratio
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
MPS2222A
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
MPS2222A
hre
—
8.0
4.0
X 10–4
Small–Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
MPS2222A
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
MPS2222A
hfe
50
75
300
375
—
Output Admittance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
MPS2222A
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
MPS2222A
hoe
5.0
25
35
200
mmhos
Collector Base Time Constant
(IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz)
MPS2222A
rb
′Cc
—
150
ps
Noise Figure
(IC = 100 mAdc, VCE = 10 Vdc, RS = 1.0 k, f = 1.0 kHz)
MPS2222A
NF
—
4.0
dB
SWITCHING CHARACTERISTICS
MPS2222A only
Delay Time
(VCC = 30 Vdc, VBE(off) = –0.5 Vdc,
td
—
10
ns
Rise Time
( CC
BE(off)
IC = 150 mAdc, IB1 = 15 mAdc) (Figure 1)
tr
—
25
ns
Storage Time
(VCC = 30 Vdc, IC = 150 mAdc,
ts
—
225
ns
Fall Time
( CC
C
IB1 = IB2 = 15 mAdc) (Figure 2)
tf
—
60
ns
1. Pulse Test: Pulse Width
v 300 ms, Duty Cycle v 2.0%.
2. fT is defined as the frequency at which |hfe| extrapolates to unity.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MPS2222RLRA | 功能描述:两极晶体管 - BJT 600mA 60V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MPS2222RLRAG | 功能描述:两极晶体管 - BJT 600mA 60V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MPS2222RLRM | 功能描述:两极晶体管 - BJT 600mA 60V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MPS2222RLRMG | 功能描述:两极晶体管 - BJT 600mA 60V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MPS2222RLRP | 功能描述:两极晶体管 - BJT 600mA 60V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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