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参数资料
| 型号： | MPS2369RLRAG |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | CASE 29-11, TO-226AA, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 125K |
| 代理商： | MPS2369RLRAG |
Switching Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
15
Vdc
Collector–Emitter Voltage
VCES
40
Vdc
Collector–Base Voltage
VCBO
40
Vdc
Emitter–Base Voltage
VEBO
4.5
Vdc
Collector Current — Continuous
IC
200
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25
°C
PD
625
5.0
mW
mW/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
200
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(1)
(IC = 10 mAdc, IB = 0)
MPS2369A
V(BR)CEO
15
—
Vdc
Collector–Emitter Breakdown Voltage
(IC = 10 Adc, VBE = 0)
MPS2369,A
V(BR)CES
40
—
Vdc
Collector–Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
MPS2369,A
V(BR)CBO
40
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
MPS2369,A
V(BR)EBO
4.5
—
Vdc
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
(VCB = 20 Vdc, IE = 0, TA = 125°C)
MPS2369,A
ICBO
—
0.4
30
Adc
Collector Cutoff Current
(VCE = 20 Vdc, VBE = 0)
MPS2369,A
ICES
—
0.4
Adc
1. Pulse Test: Pulse Width
v 300 ms, Duty Cycle v 2.0%.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductort
Semiconductor Components Industries, LLC, 2001
June, 2001 – Rev. 2
793
Publication Order Number:
MPS2369/D
MPS2369
MPS2369A
*ON Semiconductor Preferred Device
CASE 29–11, STYLE 1
TO–92 (TO–226AA)
1
2
3
*
COLLECTOR
3
2
BASE
1
EMITTER
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