- 您现在的位置：买卖IC网 > PDF目录98029 > MPS3638AZL1 (ON SEMICONDUCTOR) 500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 PDF资料下载
参数资料
| 型号： | MPS3638AZL1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | PLASTIC, TO-226AA, 3 PIN |
| 文件页数： | 1/37页 |
| 文件大小： | 421K |
| 代理商： | MPS3638AZL1 |
当前第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页
2–546
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Switching Transistor
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
VCEO
–25
Vdc
Collector – Emitter Voltage
VCES
–25
Vdc
Collector – Base Voltage
VCBO
–25
Vdc
Emitter – Base Voltage
VEBO
–4.0
Vdc
Collector Current — Continuous
IC
–500
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25
°C
PD
625
5.0
mW
mW/
°C
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
1.5
12
Watts
mW/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA(1)
200
°C/W
Thermal Resistance, Junction to Case
RqJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = –100 mAdc, VBE = 0)
V(BR)CES
–25
—
Vdc
Collector – Emitter Sustaining Voltage(2)
(IC = –10 mAdc, IB = 0)
VCEO(sus)
–25
—
Vdc
Collector – Base Breakdown Voltage
(IC = –100 mAdc, IE = 0)
V(BR)CBO
–25
—
Vdc
Emitter – Base Breakdown Voltage
(IE = –100 mAdc, IC = 0)
V(BR)EBO
–4.0
—
Vdc
Collector Cutoff Current
(VCE = –15 Vdc, VBE = 0)
(VCE = –15 Vdc, VBE = 0, TA = –65°C)
ICES
—
–0.035
–2.0
mAdc
Emitter Cutoff Current
(VEB = –3.0 V, IC = 0)
IEBO
—
–35
nA
Base Current
(VCE = –15 Vdc, VBE = 0)
IB
—
–0.035
mAdc
1. RqJA is measured with the device soldered into a typical printed circuit board.
2. Pulse Test: Pulse Width
v 300 ms; Duty Cycle v 2.0%.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MPS3638A
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
1
2
3
COLLECTOR
3
2
BASE
1
EMITTER
(Replaces MPS3638/D)
相关PDF资料 |
PDF描述 |
|---|---|
| MPS3638ARLRE | 500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPS3638ARLRM | 500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPS3638ARL | 500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPS3638ARLRA | 500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPS3638ARL1 | 500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MPS3639 | 制造商:NJSEMI 制造商全称:New Jersey Semi-Conductor Products, Inc. 功能描述:PNP SMALL SIGNAL GENERAL PURPOSE AMPLIFIERS |
| MPS3640 | 制造商:Freescale Semiconductor 功能描述: 制造商:FRESCL 功能描述: 制造商:Motorola Inc 功能描述:Bipolar Junction Transistor, PNP Type, TO-92 |
| MPS3642C | 制造商:未知厂家 制造商全称:未知厂家 功能描述:NPN TRANSISTOR |
| MPS3646 | 功能描述:两极晶体管 - BJT 300mA 40V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MPS3646C | 制造商:未知厂家 制造商全称:未知厂家 功能描述:NPN TRANSISTOR |
发布紧急采购，3分钟左右您将得到回复。