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参数资料
| 型号： | MPS3646 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Switching Transistor |
| 中文描述： | 300 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 文件页数： | 1/6页 |
| 文件大小： | 268K |
| 代理商： | MPS3646 |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCES
VCBO
VEBO
IC
15
Vdc
Collector–Emitter Voltage
40
Vdc
Collector–Base Voltage
40
Vdc
Emitter–Base Voltage
5.0
Vdc
Collector Current— Continuous
— 10 s Pulse
300
500
mAdc
Total Device Dissipation @ TA = 25
°
C
Derate above 25
°
C
PD
625
5.0
mW
mW/
°
C
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
PD
1.5
12
Watts
mW/
°
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RJA
RJC
200
°
C/W
Thermal Resistance, Junction to Case
83.3
°
C/W
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 100 Adc, VBE = 0)
Collector–Emitter Sustaining Voltage(1)
(IC = 10 mAdc, IB = 0)
V(BR)CES
40
—
Vdc
VCEO(sus)
15
—
Vdc
Collector–Base Breakdown Voltage
(IC = 100 Adc, IE = 0)
V(BR)CBO
40
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 100 Adc, IC = 0)
V(BR)EBO
5.0
—
Vdc
Collector Cutoff Current
(VCE = 20 Vdc, VBE = 0)
(VCE = 20 Vdc, VBE = 0, TA = 65
°
C)
ICES
—
—
0.5
3.0
Adc
1. Pulse Test: Pulse Width
300 s; Duty Cycle
2.0%.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MPS3646/D
SEMICONDUCTOR TECHNICAL DATA
Motorola Preferred Device
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
1
23
COLLECTOR
3
2
BASE
1
EMITTER
相关PDF资料 |
PDF描述 |
|---|---|
| MPS3646 | Switching Trasnistor(NPN Silicon) |
| MPS3904 | General Purpose Transistor |
| MPS3904 | General Purpose Transistor(NPN Silicon) |
| MPS3906 | General Purpose Transistor |
| MPS3906 | General Purpose Transistor(PNP Silicon) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MPS3646C | 制造商:未知厂家 制造商全称:未知厂家 功能描述:NPN TRANSISTOR |
| MPS3646G | 功能描述:两极晶体管 - BJT 300mA 40V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MPS3646RLRA | 功能描述:两极晶体管 - BJT 300mA 40V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MPS3646RLRAG | 功能描述:两极晶体管 - BJT 300mA 40V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MPS3646RLRM | 制造商:ON Semiconductor 功能描述:Trans GP BJT NPN 15V 0.3A 3-Pin TO-92 Tape and Ammo |
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