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参数资料
| 型号： | MPS3904RLRM |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | TO-226AA, 3 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 224K |
| 代理商： | MPS3904RLRM |
General Purpose Transistor
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
40
Vdc
Collector–Base Voltage
VCBO
60
Vdc
Emitter–Base Voltage
VEBO
6.0
Vdc
Collector Current — Continuous
IC
100
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25
°C
PD
625
5.0
mW
mW/
°C
Total Power Dissipation @ TA = 60°C
PD
450
mW
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
1.5
12
Watts
mW/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
200
°C/W
Thermal Resistance, Junction to Case
RqJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
40
—
Vdc
Collector–Base Breakdown Voltage
(IC = 10 Adc, IE = 0)
V(BR)CBO
60
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 10 Adc, IC = 0)
V(BR)EBO
6.0
—
Vdc
Collector Cutoff Current
(VCE = 30 Vdc, VEB(off) = 3.0 Vdc)
ICEX
—
50
nAdc
Base Cutoff Current
(VCE = 30 Vdc, VEB(off) = 3.0 Vdc)
IBL
—
50
nAdc
1. Pulse Test: Pulse Width
≤ 300 ms, Duty Cycle ≤ 2.0%.
ON Semiconductort
Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 2
805
Publication Order Number:
MPS3904/D
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
1
2
3
MPS3904
COLLECTOR
3
2
BASE
1
EMITTER
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| MPS3904RL | 100 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPS3904RLRA | 100 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPS4123RLRM | 200 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPS4123ZL1 | 200 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
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