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参数资料
| 型号： | MPS4126RL |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 200 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | CASE 29-04, TO-226AA, 3 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 112K |
| 代理商： | MPS4126RL |
Amplifier Transistor
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCE
–25
Vdc
Collector–Base Voltage
VCB
–25
Vdc
Emitter–Base Voltage
VEB
–4.0
Vdc
Collector Current — Continuous
IC
–200
mAdc
Total Power Dissipation @ TA = 25°C
Derate above 25
°C
PD
625
5.0
mW
mW/
°C
Total Power Dissipation @ TC = 25°C
Derate above 25
°C
PD
1.5
12
W
mW/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
200
°C/W
Thermal Resistance, Junction to Case
RqJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –1.0 mA, IB = 0)
V(BR)CEO
–25
—
Vdc
Collector–Base Breakdown Voltage
(IC = –10 mA, IE = 0)
V(BR)CBO
–25
—
Vdc
Emitter–Base Breakdown Voltage
(IC = 0, IE = –10 mA)
V(BR)EBO
–4.0
—
Vdc
Collector Cutoff Current
(VCB = –20 V, IE = 0)
ICBO
—
–50
nAdc
Emitter Cutoff Current
(VEB = –3.0 V, IC = 0)
IEBO
—
–50
nAdc
ON Semiconductort
Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 1
813
Publication Order Number:
MPS4126/D
MPS4126
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
1
2
3
COLLECTOR
3
2
BASE
1
EMITTER
相关PDF资料 |
PDF描述 |
|---|---|
| MPS4126ZL1 | 200 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPS4250RL1 | 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPS4250RLRE | 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPS4250RLRP | 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPS4250RL | 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MPS4126RLRA | 功能描述:两极晶体管 - BJT 200mA 25V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MPS4126RLRAG | 功能描述:两极晶体管 - BJT 200mA 25V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MPS4164BY WAF | 制造商:Texas Instruments 功能描述: |
| MPS4249 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:PNP (AMPLIFIER TRANSISTOR) |
| MPS4250 | 功能描述:两极晶体管 - BJT 40V Small Signal RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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