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参数资料
| 型号： | MPS651RL1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | PLASTIC, TO-226AA, 3 PIN |
| 文件页数： | 12/34页 |
| 文件大小： | 342K |
| 代理商： | MPS651RL1 |
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NPN MPS650 MPS651 PNP MPS750 MPS751
2–530
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 50 mA, VCE = 2.0 V)
(IC = 500 mA, VCE = 2.0 V)
(IC = 1.0 A, VCE = 2.0 V)
(IC = 2.0 A, VCE = 2.0 V)
hFE
75
40
—
Collector – Emitter Saturation Voltage
(IC = 2.0 A, IB = 200 mA)
(IC = 1.0 A, IB = 100 mA)
VCE(sat)
—
0.5
0.3
Vdc
Base–Emitter On Voltage (IC = 1.0 A, VCE = 2.0 V)
VBE(on)
—
1.0
Vdc
Base – Emitter Saturation Voltage (IC = 1.0 A, IB = 100 mA)
VBE(sat)
—
1.2
Vdc
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product(2)
(IC = 50 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
fT
75
—
MHz
1. Pulse Test: Pulse Width
≤ 300 ms, Duty Cycle = 2.0%.
2. fT is defined as the frequency at which |hfe| extrapolates to unity.
Figure 1. MPS650, MPS651
Typical DC Current Gain
IC, COLLECTOR CURRENT (mA)
10
h
FE
,D
C
U
RRENT
G
AIN
300
0
VCE = 2.0 V
TJ = 125°C
25
°C
–55
°C
NPN
IC, COLLECTOR CURRENT (mA)
–10
– 20
– 50
–10
0
– 200
– 500
h
FE
,DC
CURRENT
GAIN
250
0
PNP
30
60
90
120
150
180
210
240
270
20
50
100
200
500 1.0 A 2.0 A 4.0 A
25
50
75
100
125
200
175
150
225
–1.0 A –2.0 A –4.0 A
VCE = –2.0 V
TJ = 125°C
25
°C
–55
°C
IC, COLLECTOR CURRENT (mA)
50
V
,V
OL
TA
G
E
(V
OL
TS)
2.0
0
IC, COLLECTOR CURRENT (mA)
V
,VOL
TAGE
(VOL
TS)
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = 2.0 V
VCE(sat) @ IC/IB = 10
0
Figure 2. MPS750, MPS751
Typical DC Current Gain
Figure 3. MPS650, MPS651
On Voltages
Figure 4. MPS750, MPS751
On Voltages
1.8
1.6
1.4
1.2
1.0
0.4
0.8
0.6
0.2
100
200
500
1.0 A
2.0 A
4.0 A
–50
–2.0
–1.8
–1.6
–1.4
–1.2
–1.0
–0.4
–0.8
–0.6
–0.2
–10
0
–20
0
–50
0
–1.0 A
–2.0 A
–4.0 A
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
NPN
PNP
VBE(on) @ VCE = 2.0 V
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| MPS750RL | 2000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MPS651RLRA | 功能描述:两极晶体管 - BJT 2A 80V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MPS651RLRAG | 功能描述:两极晶体管 - BJT 2A 80V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MPS651RLRB | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MPS651RLRBG | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Amplifier Transistors |
| MPS651RLRM | 功能描述:两极晶体管 - BJT 2A 80V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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