参数资料
型号: MPS6521RL1
厂商: ON SEMICONDUCTOR
元件分类: 小信号晶体管
英文描述: 100 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
封装: TO-226AA, 3 PIN
文件页数: 6/11页
文件大小: 480K
代理商: MPS6521RL1
NPN MPS6521 PNP MPS6523
http://onsemi.com
829
NPN
MPS6521
NOISE FIGURE CONTOURS
(VCE = 5.0 Vdc, TA = 25°C)
Figure 5. Narrow Band, 100 Hz
IC, COLLECTOR CURRENT (A)
500k
Figure 6. Narrow Band, 1.0 kHz
IC, COLLECTOR CURRENT (A)
10
2.0 dB
BANDWIDTH = 1.0 Hz
R S
,SOURCE
RESIST
ANCE
(OHMS)
R S
,SOURCE
RESIST
ANCE
(OHMS)
Figure 7. Wideband
IC, COLLECTOR CURRENT (A)
10
10 Hz to 15.7 kHz
R S
,SOURCE
RESIST
ANCE
(OHMS)
Noise Figure is defined as:
NF
+ 20 log10
en2 ) 4KTRS ) In
2RS2
4KTRS
1 2
= Noise Voltage of the Transistor referred to the input. (Figure 3)
= Noise Current of the Transistor referred to the input. (Figure 4)
= Boltzman’s Constant (1.38 x 10–23 j/
°K)
= Temperature of the Source Resistance (
°K)
= Source Resistance (Ohms)
en
In
K
T
RS
3.0 dB 4.0 dB
6.0 dB
10 dB
50
100
200
500
1k
10k
5k
20k
50k
100k
200k
2k
20 30
50 70 100
200 300
500 700 1k
10
20 30
50 70 100
200 300
500 700 1k
500k
100
200
500
1k
10k
5k
20k
50k
100k
200k
2k
1M
500k
50
100
200
500
1k
10k
5k
20k
50k
100k
200k
2k
20 30
50 70 100
200 300
500 700 1k
BANDWIDTH = 1.0 Hz
1.0 dB
2.0 dB
3.0 dB
5.0 dB
8.0 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
8.0 dB
相关PDF资料
PDF描述
MPS6523RL 100 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPS6523RLRE 100 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPS6523ZL1 100 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPS6521RL 100 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPS6523RLRM 100 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
相关代理商/技术参数
参数描述
MPS6521RLRA 功能描述:两极晶体管 - BJT 100mA 40V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MPS6521RLRAG 功能描述:两极晶体管 - BJT 100mA 40V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MPS6522 功能描述:两极晶体管 - BJT PNP Gen Pur SS RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MPS6523 功能描述:两极晶体管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MPS6523_01 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:PNP General Purpose Amplifier