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参数资料
| 型号： | MPS6652ZL1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | CASE 29-11, TO-226AA, 3 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 184K |
| 代理商： | MPS6652ZL1 |
Amplifier Transistors
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
MPS6601/6651
MPS6602/6652
VCEO
25
40
Vdc
Collector–Base Voltage
MPS6601/6651
MPS6602/6652
VCBO
25
30
Vdc
Emitter–Base Voltage
VEBO
4.0
Vdc
Collector Current — Continuous
IC
1000
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25
°C
PD
625
5.0
mW
mW/
°C
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
1.5
12
Watts
mW/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
(1)
200
°C/W
Thermal Resistance, Junction to Case
RqJC
83.3
°C/W
1. RqJA is measured with the device soldered into a typical printed circuit board.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductort
Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 2
837
Publication Order Number:
MPS6601/D
NPN
MPS6601
MPS6602
PNP
MPS6651
MPS6652
*ON Semiconductor Preferred Device
*
CASE 29–11, STYLE 1
TO–92 (TO–226AA)
1
2
3
*
Voltage and current are negative
for PNP transistors
COLLECTOR
3
2
BASE
1
EMITTER
COLLECTOR
3
2
BASE
1
EMITTER
NPN
PNP
相关PDF资料 |
PDF描述 |
|---|---|
| MPS6602RL1 | 1000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPS6602RLRM | 1000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPS6651RL | 1000 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPS6601RLRE | 1000 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPS6601RL | 1000 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
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| MPS66X-5000 | 功能描述:以太网和电信连接器 MPG 6P6C SH 50U RoHS:否 制造商:Pulse 产品:Modular Jacks 性能类别: USOC 代码:RJ45 位置/触点数量: 安装风格:Through Hole 端口数量:1 x 1 型式:Female 屏蔽: 电流额定值: 电压额定值: 触点电镀: 外壳材料:Thermoplastic IP 等级: |
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