参数资料
型号: MPS6714ZL1
厂商: ON SEMICONDUCTOR
元件分类: 小信号晶体管
英文描述: 1000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
封装: PLASTIC, TO-226AE, 3 PIN
文件页数: 1/34页
文件大小: 324K
代理商: MPS6714ZL1
2–602
Motorola Small–Signal Transistors, FETs and Diodes Device Data
One Watt Amplifier Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
MPS6714
MPS6715
VCEO
30
40
Vdc
Collector – Base Voltage
MPS6714
MPS6715
VCBO
40
50
Vdc
Emitter – Base Voltage
VEBO
5.0
Vdc
Collector Current — Continuous
IC
1.0
Adc
Total Device Dissipation @ TA = 25°C
Derate above 25
°C
PD
1.0
8.0
Watts
mW/
°C
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
2.5
20
Watts
mW/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
125
°C/W
Thermal Resistance, Junction to Case
RqJC
50
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 10 mAdc, IB = 0)
MPS6714
MPS6715
V(BR)CEO
30
40
Vdc
Collector – Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
MPS6714
MPS6715
V(BR)CBO
40
50
Vdc
Emitter – Base Breakdown Voltage
(IE = 100 mAdc, IC = 0)
V(BR)EBO
5.0
Vdc
Collector Cutoff Current
(VCB = 40 Vdc, IE = 0)
MPS6714
(VCB = 50 Vdc, IE = 0)
MPS6715
ICBO
0.1
Adc
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
IEBO
0.1
Adc
1. Pulse Test: Pulse Width
v 30 ms; Duty Cycle v 2.0%.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MPS6714
MPS6715
CASE 29–05, STYLE 1
TO–92 (TO–226AE)
1
2
3
COLLECTOR
3
2
BASE
1
EMITTER
相关PDF资料
PDF描述
MPS6715RLRE 1000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPS6714RLRM 1000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPS6714 1000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPS6715RLRA 1000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPS6714RL1 1000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
相关代理商/技术参数
参数描述
MPS6715 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:One Watt Amplifier Transistors
MPS6717 功能描述:两极晶体管 - BJT 500mA 80V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MPS6717G 功能描述:两极晶体管 - BJT 500mA 80V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MPS6717RLRA 功能描述:两极晶体管 - BJT 500mA 80V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MPS6717RLRAG 功能描述:两极晶体管 - BJT 500mA 80V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2