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参数资料
| 型号： | MPS8050 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1500 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | TO-92, 3 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 45K |
| 代理商： | MPS8050 |
2010. 6. 10
1/2
SEMICONDUCTOR
TECHNICAL DATA
MPS8050
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 3
HIGH CURRENT APPLICATION.
FEATURE
Complementary to MPS8550.
MAXIMUM RATING (Ta=25
)
TO-92
DIM MILLIMETERS
A
B
C
D
F
G
H
J
K
L
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
D
1
2 3
B
A
J
K
G
H
F
L
E
C
E
C
M
N
0.45 MAX
M
1.00
N
1. EMITTER
3. COLLECTOR
2. BASE
+_
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB=35V, IE=0
-
100
nA
Emitter Cut-off Current
IEBO
VEB=6V, IC=0
-
100
nA
Collector-Base Breakdown Voltage
V(BR)CBO
IC=100 A, IE=0
40
-
V
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC=2mA, IB=0
25
-
V
DC Current Gain
hFE(1)
VCE=1V, IC=5mA
45
135
-
hFE(2) (Note)
VCE=1V, IC=100mA
85
160
300
hFE(3)
VCE=1V, IC=800mA
40
110
-
Collector-Emitter Saturation Voltage
VCE(sat)
IC=800mA, IB=80mA
-
0.28
0.5
V
Base-Emitter Saturation Voltage
VBE(sat)
IC=800mA, IB=80mA
-
0.98
1.2
V
Base-Emitter Voltage
VBE
VCE=1V, IC=10mA
-
0.66
1.0
V
Transition Frequency
fT
VCE=10V, IC=50mA
100
190
-
MHz
Collector Output Capacitance
Cob
VCB=10V, f=1MHz, IE=0
-
9
-
pF
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
40
V
Collector-Emitter Voltage
VCEO
25
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
IC
1.5
A
Collector Power Dissipation
PC*
625
mW
400
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55
150
Note : hFE(2) Classification
B:85
160 , C : 120
200 , D : 160
300
*Cu Lead-Frame : 625mW
Fe Lead-Frame : 400mW
相关PDF资料 |
PDF描述 |
|---|---|
| MPS8050B | 1500 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPS8050D | 1500 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPS8093 | 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPS8093RLRP | 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPS8093RLRB | 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MPS8050_10 | 制造商:KEC 制造商全称:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR NPN TRANSISTOR |
| MPS8050S | 制造商:KEC 制造商全称:KEC(Korea Electronics) 功能描述:KEC三极管 |
| MPS8097 | 功能描述:两极晶体管 - BJT NPN Gen Pur SS RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MPS8098 | 功能描述:两极晶体管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MPS8098_01 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:NPN General Purpose Amplifier |
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