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参数资料
| 型号： | MPS8550J18Z |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 800 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | TO-92, 3 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 311K |
| 代理商： | MPS8550J18Z |
MPS8550
PNP General Purpose Amplifier
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
MPS8550
PD
Total Device Dissipation
Derate above 25
°C
625
5.0
mW
mW/
°C
RθJC
Thermal Resistance, Junction to Case
83.3
°C/W
RθJA
Thermal Resistance, Junction to Ambient
200
°C/W
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
25
V
VCBO
Collector-Base Voltage
40
V
VEBO
Emitter-Base Voltage
6.0
V
IC
Collector Current - Continuous
800
mA
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
This device is designed for general purpose audio amplifier applications
at collector currents to 500 mA. Sourced from Process 60.
C
B
E
TO-92
1997 Fairchild Semiconductor Corporation
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
MPS8550
相关PDF资料 |
PDF描述 |
|---|---|
| MPS8550D | 1500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPS8550C | 1500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPS8550B | 1500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPS8550S-D | 1500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| MPS8550S | 1500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MPS8550S | 制造商:KEC 制造商全称:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR PNP TRANSISTOR (HIGH CURRENT) |
| MPS8598 | 功能描述:两极晶体管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MPS8598_Q | 功能描述:两极晶体管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MPS8598G | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Amplifier Transistors Voltage and Current are Negative for PNP Transistors |
| MPS8598RLRA | 功能描述:两极晶体管 - BJT 500mA 60V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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