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参数资料
| 型号： | MPS918-BP |
| 厂商： | MICRO COMMERCIAL COMPONENTS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 1/3页 |
| 文件大小： | 73K |
| 代理商： | MPS918-BP |
MPS918
NPN Silicon
Amplifier Transistor
Features
Maximum Ratings
Symbol
Rating
Unit
VCEO
Collector-Emitter Voltage
15
V
VCBO
Collector-Base Voltage
30
V
VEBO
Emitter-Base Voltage
3.0
V
IC
Collector Current, Continuous
50
mA
TJ
Operating Junction Temperature
-55 to +150
OC
TSTG
Storage Temperature
-55 to +150
OC
Thermal Characteristics
Symbol
Rating
Max
Unit
PD
Total Device Dissipation
Derate above 25
OC
350
2.8
mW
mW/
OC
PD
Total Device Dissipation
Derate above 25
OC
0.85
6.8
W
mW/
OC
RJC
Thermal Resistance, Junction to Case
147
OC/W
RJA
Thermal Resistance, Junction to Ambient
357
OC/W
Electrical Characteristics @ 25
OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
(2)
(IC=3.0mAdc, IE=0)
15
---
Vdc
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=1.0uAdc, IE=0)
30
---
Vdc
V(BR)EBO
Emitter-Base Breakdown Voltage
(IE=10uAdc, IC=0)
3.0
---
Vdc
ICBO
Collector Cutoff Current
(VCB=15Vdc, IE=0)
---
10
nAdc
ON CHARACTERISTICS
hFE
DC Current Gain
(VCE=1.0Vdc, IC=3.0mAdc)
20
---
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=10mAdc, IB=1.0mAdc)
---
0.4
Vdc
VBE(sat)
Base-Emitter On Voltage
(IC=10mAdc, IB=1.0mAdc)
---
1.0
Vdc
(1) RJA is measured with the device soldered into a typical printed circuit board.
(2) Pulse Test: Pulse Width<300us, Duty Cycle<1.0%
TO-92
AE
B
C
D
G
(1)
Simplifies Circuit Design
Reduces Component Count
Revision: 4
2006/05/16
omponents
20736 Marilla
Street Chatsworth
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MCC
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.170
.190
4.33
4.83
B
.170
.190
4.30
4.83
C
.550
.590
13.97
14.97
D
.010
.020
0.36
0.56
E
.130
.160
3.30
3.96
G
.010
.104
2.44
2.64
TM
Micro Commercial Components
E
BC
Case Material: Molded Plastic.
UL Flammability
Classification Rating 94V-0
Marking:MPS918
www.mccsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MPS918G | 功能描述:两极晶体管 - BJT 50mA 12V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MPS929 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:AMPLIFIER TRANSISTOR |
| MPS930 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 100MA I(C) | TO-92 |
| MPS930A | 制造商:Motorola Inc 功能描述:TRANSISTOR,BJT,NPN,45V V(BR)CEO,100MA I(C),TO-92 |
| MPS930BIN WAF | 制造商:Texas Instruments 功能描述: |
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