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参数资料
| 型号： | MPSA13D27Z |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1200 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 文件页数： | 6/13页 |
| 文件大小： | 843K |
| 代理商： | MPSA13D27Z |
MPSA13
/
MMBT
A13
/
PZT
A13
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
V(BR)CES
Collector-Em itter Breakdown
Voltage
IC = 100
A, IB = 0
30
V
ICBO
Collector-Cutoff Current
VCB = 30 V, IE = 0
100
nA
IEBO
Em itter-Cutoff Current
VEB = 10 V, IC = 0
100
nA
ON CHARACTERISTICS*
hFE
DC Current Gain
IC = 10 mA, VCE = 5.0 V
IC = 100 mA, VCE = 5.0 V
5,000
10,000
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 100 mA, IB = 0.1 mA
1.5
V
VBE(on)
Base-Emitter On Voltage
IC = 100 mA, VCE = 5.0 V
2.0
V
SMALL SIGNAL CHARACTERISTICS
*Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%
fT
Current Gain - Bandwidth Product
IC = 10 mA, VCE = 10 V,
f = 100 MHz
125
MHz
NPN Darlington Transistor
(continued)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MPSA13DA | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 30V V(BR)CEO | CHIP |
| MPSA13DB | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 30V V(BR)CEO | CHIP |
| MPSA13DC | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 30V V(BR)CEO | CHIP |
| MPSA13G | 功能描述:达林顿晶体管 500mA 30V NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MPSA13G | 制造商:ON Semiconductor 功能描述:Bipolar Transistor |
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