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参数资料
| 型号： | MPSA14RLRE |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | CASE 29-11, TO-226AA, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 187K |
| 代理商： | MPSA14RLRE |
Darlington Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCES
30
Vdc
Collector–Base Voltage
VCBO
30
Vdc
Emitter–Base Voltage
VEBO
10
Vdc
Collector Current — Continuous
IC
500
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25
°C
PD
625
5.0
mW
mW/
°C
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
1.5
12
Watts
mW/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
200
°C/W
Thermal Resistance, Junction to Case
RqJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 100 Adc, IB = 0)
V(BR)CES
30
—
Vdc
Collector Cutoff Current
(VCB= 30 Vdc, IE = 0)
ICBO
—
100
nAdc
Emitter Cutoff Current
(VEB= 10 Vdc, IC = 0)
IEBO
—
100
nAdc
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductort
Semiconductor Components Industries, LLC, 2001
June, 2001 – Rev. 2
860
Publication Order Number:
MPSA13/D
MPSA13
MPSA14
*ON Semiconductor Preferred Device
CASE 29–11, STYLE 1
TO–92 (TO–226AA)
*
1
2
3
COLLECTOR 3
BASE
2
EMITTER 1
相关PDF资料 |
PDF描述 |
|---|---|
| MPSA13RLRE | 500 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPSA13RL | 500 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPSA14TPER1 | 500 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPSA14TPE1 | 500 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPSA14TPE2 | 500 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MPSA14RLRM | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MPSA14RLRP | 功能描述:达林顿晶体管 500mA 30V NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MPSA14RLRPG | 功能描述:达林顿晶体管 500mA 30V NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MPSA14STOA | 功能描述:两极晶体管 - BJT - RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MPSA14STOB | 功能描述:两极晶体管 - BJT - RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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