参数资料
型号: MPSA42,412
厂商: NXP SEMICONDUCTORS
元件分类: 小信号晶体管
英文描述: 100 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
封装: PLASTIC, SC-43A, 3 PIN
文件页数: 4/6页
文件大小: 104K
代理商: MPSA42,412
2004 Oct 11
4
NXP Semiconductors
Product data sheet
NPN high-voltage transistors
MPSA42; MPSA43
PACKAGE OUTLINE
UNIT
A
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
mm
5.2
5.0
b
0.48
0.40
c
0.45
0.38
D
4.8
4.4
d
1.7
1.4
E
4.2
3.6
L
14.5
12.7
e
2.54
e1
1.27
L1
(1)
max.
2.5
b1
0.66
0.55
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
SOT54
TO-92
SC-43A
04-06-28
04-11-16
A
L
0
2.5
5 mm
scale
b
c
D
b1
L1
d
E
Plastic single-ended leaded (through hole) package; 3 leads
SOT54
e1
e
1
2
3
相关PDF资料
PDF描述
MPSA42T/R 100 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPSA43 200 mA, 200 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPSA43J18Z 200 mA, 200 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPSA43D74Z 200 mA, 200 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPSA43D27Z 200 mA, 200 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
相关代理商/技术参数
参数描述
MPSA42-A 功能描述:两极晶体管 - BJT 300mA 300V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MPSA42-AB3-R 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:HIGH VOLTAGE TRANSISTOR
MPSA42-AP 功能描述:两极晶体管 - BJT 300mA 300V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MPSA42-BK 制造商:DIOTEC 制造商全称:Diotec Semiconductor 功能描述:High voltage Si-epitaxial planar transistors
MPSA42-BP 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:NPN Silicon High Voltage Transistor 625mW