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参数资料
| 型号： | MPSA42 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | High Voltage Transistors NPN Silicon(NPN高电压放大器) |
| 中文描述： | 50 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | CASE 29-11, TO-226AA, 3 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 58K |
| 代理商： | MPSA42 |
Semiconductor Components Industries, LLC, 2005
June, 2005 Rev. 3
1
Publication Order Number:
MPSA42/D
MPSA42, MPSA43
MPSA42 is a Preferred Device
High Voltage Transistors
NPN Silicon
Features
PbFree Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
MPSA43
MPSA42
V
CEO
200
300
Vdc
CollectorBase Voltage
MPSA43
MPSA42
V
CBO
200
300
Vdc
EmitterBase Voltage
V
EBO
6.0
Vdc
Collector Current Continuous
I
C
500
mAdc
Total Device Dissipation
@ T
A
= 25
°
C
Derate above 25
°
C
P
D
625
5.0
mW
mW/
°
C
Total Device Dissipation
@ T
C
= 25
°
C
Derate above 25
°
C
P
D
1.5
12
W
mW/
°
C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
55 to
+150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
JunctiontoAmbient
R
JA
200
°
C/mW
Thermal Resistance,
JunctiontoCase
R
JC
83.3
°
C/mW
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
x
A
Y
WW
= 2 or 3
= Assembly Location
= Year
= Work Week
= PbFree Package
(Note: Microdot may be in either location)
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
ORDERING INFORMATION
COLLECTOR
3
2
BASE
1
EMITTER
MARKING DIAGRAM
MPS
A4x
AYWW
3
2
1
Preferred
devices are recommended choices for future use
and best overall value.
TO92
(TO226AA)
CASE 2911
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MPS-A42 | 制造商:MICRO-ELECTRONICS 制造商全称:Micro Electronics 功能描述:NPN SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS |
| MPSA42 AMO | 功能描述:两极晶体管 - BJT TRANS HV AMMO RADIAL RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MPSA42 T/R | 功能描述:两极晶体管 - BJT TRANS HV TAPE RADIAL RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MPSA42,116 | 功能描述:两极晶体管 - BJT TRANS HV TAPE RADIAL RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MPSA42,126 | 功能描述:两极晶体管 - BJT TRANS HV AMMO RADIAL RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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