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参数资料
| 型号： | MPSA55-AP |
| 厂商： | MICRO COMMERCIAL COMPONENTS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件页数： | 1/2页 |
| 文件大小： | 212K |
| 代理商： | MPSA55-AP |
MPSA55
MPSA56
PNP Silicon
Amplifier Transistor
TO-92
Features
Capable of 1.5Watts of Power Dissipation.
Collector-current 500mA
Collector-base Voltage 80V
Operating and storage junction temperature range: -55
OC to +150OC
Maximum Ratings
Symbol
Rating
Unit
VCEO
Collector-Emitter Voltage
80
V
VCBO
Collector-Base Voltage
80
V
VEBO
Emitter-Base Voltage
4.0
V
IC
Collector Current Continuous
500
mA
PD
Total Device Dissipation @TA=25
OC
Derate above 25
OC
625
5.0
mW
mW/
OC
PD
Total Device Dissipation @TA=25
OC
Derate above 25
OC
1.5
12
W
mW/
OC
TJ
Junction Temperature
-55 to +150
OC
TSTG
Storage Temperature
-55 to +150
OC
Electrical Characteristics @ 25
OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
(1)
(IC=1.0mAdc, IB=0)
MPSA55
MPSA56
60
80
Vdc
V(BR)EBO
Emitter-Base Breakdown Voltage
(IE=100uAdc, IC=0)
4.0
Vdc
ICES
Collector Cutoff Current
(VCE=60Vdc, IB=0)
0.1
uAdc
ICBO
Collector Cutoff Current
(VCB=60Vdc, IE=0)
MPSA55
(VCB=80Vdc, IE=0)
MPSA56
0.1
uAdc
ON CHARACTERISTICS
(1)
hFE(1)
DC Current Gain
(IC=10mAdc, VCE=1.0Vdc)
100
hFE(2)
DC Current Gain
(IC=100mAdc, VCE=1.0Vdc)
100
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=100mAdc, IB=10mAdc)
0.25
Vdc
VBE(on)
Base-Emitter Saturation Voltage
(IC=100mAdc, VCE=1.0Vdc)
1.2
Vdc
SMALL-SIGNAL CHARACTERISTICS
fT
Current-Gain – Bandwidth Product
(3)
(IC=100mAdc, VCE=1.0Vdc,
f=100MHz)
MPSA55
MPSA56
50
MHz
1.
Pulse Test: Pulse Width<300us, Duty Cycle<2.0%
2.
fT is defined as the frequency at which |hfe| extrapolates to unity.
A
E
B
C
D
G
omponents
20736 Marilla
Street Chatsworth
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MCC
Revision: A
2011/01/01
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.170
.190
4.33
4.83
B
.170
.190
4.30
4.83
C
.550
.590
13.97
14.97
D
.010
.020
0.36
0.56
E
.130
.160
3.30
3.96
G
.0
96
.104
2.44
2.64
TM
Micro Commercial Components
Marking:MPSA55,MPSA56
www.mccsemi.com
1 of 2
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
E
B
C
相关PDF资料 |
PDF描述 |
|---|---|
| MPSA56-BP | 500 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPSA56-AP | 500 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPSA55-BP | 500 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPSA55 | 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPSA56 | 500 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MPSA55-BP | 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:PNP Silicon Amplifier Transistor |
| MPSA55G | 功能描述:两极晶体管 - BJT 100mA 60V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MPSA55G-T92-B | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:NPN MPSA05 PNP MPSA55 |
| MPSA55G-T92-K | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:NPN MPSA05 PNP MPSA55 |
| MPSA55L-T92-B | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:NPN MPSA05 PNP MPSA55 |
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