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参数资料
| 型号： | MPSA55 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | TO-92, 3 PIN |
| 文件页数： | 1/1页 |
| 文件大小： | 26K |
| 代理商： | MPSA55 |
1999. 11. 30
1/1
SEMICONDUCTOR
TECHNICAL DATA
MPSA55
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 3
AUDIO FREQUENCY AMPLIFIER APPLICATIONS.
FEATURES
Complementary to MPSA05.
Driver Stage Application of 20 to 25 Watts Amplifiers.
MAXIMUM RATING (Ta=25
)
TO-92
DIM
MILLIMETERS
A
B
C
D
F
G
H
J
K
L
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
D
1
2
3
B
A
J
K
G
H
F
L
E
C
E
C
M
N
0.45 MAX
M
1.00
N
1. EMITTER
3. COLLECTOR
2. BASE
+
_
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB=-60V, IE=0
-
-100
nA
Emitter Cut-off Current
ICEO
VCE=-60V, IB=0
-
-100
nA
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC=-5mA, IB=0
-60
-
V
DC Current Gain
hFE(1)
VCE=-1V, IC=-10mA
100
-
hFE(2)
VCE=-1V, IC=-100mA
100
-
Collector-Emitter Saturation Voltage
VCE(sat)
IC=-100mA, IB=-10mA
-
-0.25
V
Base-Emitter Voltage
VBE
VCE=-1V, IC=-100mA
-
-1.2
V
Transition Frequency
fT
VCE=-1V, IC=-100mA
50
-
MHz
Collector Output Capacitance
Cob
VCB=-10V, IE=0, f=1MHz
-
14
-
pF
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
-60
V
Collector-Emitter Voltage
VCEO
-60
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-500
mA
Emitter Current
IE
500
mA
Collector Power Dissipation
PC
625
mW
Junction Temperature
Tj
150
Storage Temperature
Tstg
-55
150
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MPS-A55 | 制造商:Motorola Inc 功能描述: |
| MPSA55 | 制造商:Fairchild Semiconductor Corporation 功能描述:Darlington Bipolar Transistor Leaded Pro |
| MPSA55_08 | 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:PNP Silicon Amplifier Transistor |
| MPSA55_11 | 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:PNP Silicon Amplifier Transistor |
| MPSA55_99 | 制造商:KEC 制造商全称:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR PNP TRANSISTOR |
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