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参数资料
| 型号： | MPSA56 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 50,000 SYSTEM GATE 1.8 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN |
| 中文描述： | 500 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | CASE 29-11, TO-226, 3 PIN |
| 文件页数： | 1/1页 |
| 文件大小： | 340K |
| 代理商： | MPSA56 |
MPSA55
MPSA56
PNP Silicon
Amplifier Transistor
TO-92
DIMENSIONS
DIM
A
B
C
D
E
G
INCHES
MIN
.175
.175
.500
.016
.135
.095
MM
MAX
.185
.185
---
.020
.145
.105
MIN
4.45
4.46
12.7
0.41
3.43
2.42
MAX
4.70
4.70
---
0.63
3.68
2.67
NOTE
Features
Capable of 1.5Watts of Power Dissipation.
Collector-current 500mA
Collector-base Voltage 80V
Operating and storage junction temperature range: -55
O
C to +150
O
C
Maximum Ratings
Symbol
V
CEO
Collector-Emitter Voltage
V
CBO
Collector-Base Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current Continuous
P
D
Total Device Dissipation @T
A
=25
O
C
Derate above 25
C
P
D
Total Device Dissipation @T
A
=25
O
C
Derate above 25
C
T
J
Junction Temperature
T
STG
Storage Temperature
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Symbol
Parameter
OFF CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Breakdown Voltage
(1)
(I
C
=1.0mAdc, I
B
=0) MPSA55
MPSA56
V
(BR)EBO
Emitter-Base Breakdown Voltage
(I
E
=100uAdc, I
C
=0)
I
CES
Collector Cutoff Current
(V
CE
=60Vdc, I
B
=0)
I
CBO
Collector Cutoff Current
(V
CB
=60Vdc, I
E
=0) MPSA55
(V
CB
=80Vdc, I
E
=0) MPSA56
ONCHARACTERISTICS
(1)
h
FE(1)
DC Current Gain
(I
C
=10mAdc, V
CE
=1.0Vdc)
h
FE(2)
DC Current Gain
(I
C
=100mAdc, V
CE
=1.0Vdc)
V
CE(sat)
Collector-Emitter Saturation Voltage
(I
C
=100mAdc, I
B
=10mAdc)
V
BE(on)
Base-Emitter Saturation Voltage
(I
C
=100mAdc, V
CE
=1.0Vdc)
SMALL-SIGNAL CHARACTERISTICS
f
T
Current-Gain – Bandwidth Product
(3)
(I
C
=100mAdc, V
CE
=1.0Vdc,
f=100MHz) MPSA55
MPSA56
1.
Pulse Test: Pulse Width<300us, Duty Cycle<2.0%
2.
f
T
is defined as the frequency at which |h
fe
| extrapolates to unity.
Rating
Rating
80
80
4.0
500
625
5.0
1.5
12
-55 to +150
-55 to +150
Unit
V
V
V
mA
mW
mW/
O
C
W
mW/
O
C
O
C
O
C
Min
Max
Units
60
80
4.0
Vdc
Vdc
0.1
uAdc
0.1
0.1
uAdc
100
100
0.25
1.2
Vdc
Vdc
50
MHz
A
E
B
C
D
G
Pin Configuration
Bottom View
C
B
E
omp
onents
21201 Itasca Street Chatsworth
!
"#
"#
$ %
!
M C C
www.
mc c semi
.c om
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相关代理商/技术参数 |
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|---|---|
| MPS-A56 | 制造商:MICRO-ELECTRONICS 制造商全称:Micro Electronics 功能描述:COMPLEMENTARY SILICON AF MEDIUM POWER TRANSISTORS |
| MPSA56 DIE | 制造商:Microchip Technology Inc 功能描述: |
| MPSA56 T/R | 功能描述:两极晶体管 - BJT TRANS HV TAPE RADIAL RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MPSA56,116 | 功能描述:两极晶体管 - BJT TRANS HV TAPE RADIAL RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MPSA56\E6 | 功能描述:两极晶体管 - BJT REORD 512-MPSA56 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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