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参数资料
| 型号： | MPSA77RLRP |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | CASE 29-11, TO-226AA, 3 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 149K |
| 代理商： | MPSA77RLRP |
Darlington Transistors
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
MPSA75
MPSA77
Unit
Collector–Emitter Voltage
VCES
–40
–60
Vdc
Emitter–Base Voltage
VEBO
–10
Vdc
Collector Current — Continuous
IC
–500
Adc
Total Device Dissipation @ TA = 25°C
Derate above 25
°C
PD
625
5.0
mW
mW/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
200
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
MPSA75
(IC = –100 Adc, VBE = 0)
MPSA77
V(BR)CES
–40
–60
—
Vdc
Collector–Base Breakdown Voltage
MPSA75
(IC = 100 mAdc, IE = 0)
MPSA77
V(BR)CBO
–40
–60
—
Vdc
Collector Cutoff Current
(VCB= –30 V, IE = 0)
MPSA75
(VCB = –50 V, IE = 0)
MPSA77
ICBO
—
–100
nAdc
Collector Cutoff Current
(VCE = –30 V, VBE = 0)
MPSA75
(VCE = –50 V, VBE = 0)
MPSA77
ICES
—
–500
nAdc
Emitter Cutoff Current (VEB = –10 Vdc)
IEBO
—
–100
nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = –10 mA, VCE = –5.0 V)
(IC = –100 mA, VCE = –5.0 V)
hFE
10,000
—
Collector–Emitter Saturation Voltage (IC = –100 mA, IB = –0.1 mAdc)
VCE(sat)
—
–1.5
Vdc
Base–Emitter On Voltage (IC = –100 mA, VCE = –5.0 Vdc)
VBE
—
–2.0
Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — High Frequency (IC = –10 mA, VCE = –5.0 V, f = 100 MHz)
|hfe|
1.25
2.4
—
ON Semiconductort
Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 1
887
Publication Order Number:
MPSA75/D
MPSA75
MPSA77
CASE 29–11, STYLE 1
TO–92 (TO–226AA)
1
2
3
COLLECTOR 3
BASE
2
EMITTER 1
相关PDF资料 |
PDF描述 |
|---|---|
| MPSA77RL | 500 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPSA77RLRM | 500 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPSA94L-T92-B | 300 mA, 400 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPSA94G-AB3-R | 300 mA, 400 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| MPSA94-T92-K | 300 mA, 400 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MPSA77STOA | 功能描述:达林顿晶体管 - RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MPSA77STOB | 功能描述:达林顿晶体管 - RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MPSA77STZ | 功能描述:达林顿晶体管 - RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MPSA92 | 功能描述:两极晶体管 - BJT PNP Gen Pur SS RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MPS-A92 | 制造商:MICRO-ELECTRONICS 制造商全称:Micro Electronics 功能描述:PNP SILICON HIGH VOLTAGE TRANSISTOR |
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