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参数资料
| 型号： | MPSA92-BP |
| 厂商： | MICRO COMMERCIAL COMPONENTS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 300 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件页数： | 1/3页 |
| 文件大小： | 231K |
| 代理商： | MPSA92-BP |
MPSA92
PNP Silicon High
Voltage Transistor
TO-92
Features
Through Hole Package
Electrical Characteristics @ 25
°C Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
-300
Vdc
(IC=-1.0mAdc, IB=0)
V(BR)CBO
Collector-Base Breakdown Voltage
-300
Vdc
(IC=-100
Adc, IE=0)
V(BR)EBO
Emitter -Base Breakdown Voltage
-5.0
Vd c
(IE=-10
Adc, IC=0)
IEBO
Emitt er Cutoff Current
-0.25
uA dc
(VEB=-3.0Vdc, IC=0)
ICBO
Collector Cutoff Current
-0.25
uAdc
(VCB=-200Vdc, IE=0)
ON CHARACTERISTICS
hFE
DC Current Gain*
(IC=-1.0mAdc, VCE=-10Vdc)
(IC=-10mAdc, VCE=-10Vdc)
(IC=-50mAdc, VCE=-10Vdc)
25
80
250
25
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=-20mAdc, IB=-2.0mAdc)
-0.5
Vdc
SMALL-SIGNAL CHARACTERISTICS
fT
Current Gain-Bandwidth Product
(IC=-10mAdc, VCE=-5Vdc, f=30MHz)
50
MHz
Ccb
Coll ec tor -Bas e Capacitance
(VCB=-20Vdc, IE=0, f=1 .0MHz)
6.0
pF
MAXIMUM RATINGS
*Pulse Width
≤ 300s, Duty Cycle ≤ 2.0%
A
E
B
C
D
G
VBE(sat)
Base-Emitter Saturation Voltage
(IC=-20mAdc, IB=-2.0mAdc)
-0.9
Vdc
Symbol
Characteristic
Unit
MPSA92
Collector – Emitter Voltage
VCEO
VCBO
VEBO
IC
PD
RqJA
RqJC
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
Total Device Dissipation @ TA = 25°C
Derate above 25
°C
Collector Current — Continuous
Emitter – Base Voltage
Collector – Base Voltage
–300
–5.0
–300
200
83.3
625
5.0
1.5
12
Watts
mW/
°C
mW
mW/
°C
°C/W
mAdc
Vdc
Operating & Storage Temperature: -55
°C to +150°C
Marking : A92
omponents
20736 Marilla
Street Chatsworth
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MCC
Revision: A
2011/01/01
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.170
.190
4.33
4.83
B
.170
.190
4.30
4.83
C
.550
.590
13.97
14.97
D
.010
.020
0.36
0.56
E
.130
.160
3.30
3.96
G
.0
96
.104
2.44
2.64
TM
Micro Commercial Components
www.mccsemi.com
1 of 3
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
E
B
C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MPSA92DA | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 300V V(BR)CEO | CHIP |
| MPSA92DB | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 300V V(BR)CEO | CHIP |
| MPSA92DC | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 300V V(BR)CEO | CHIP |
| MPSA92G | 功能描述:两极晶体管 - BJT 500mA 300V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MPSA92G | 制造商:ON Semiconductor 功能描述:BIPOLAR TRANSISTOR PNP -300V TO-92 制造商:ON Semiconductor 功能描述:BIPOLAR TRANSISTOR, PNP -300V TO-92 |
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