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参数资料
| 型号： | MPSA92M |
| 厂商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Mini size of Discrete semiconductor elements |
| 中文描述： | 迷你型离散半导体元件 |
| 文件页数： | 1/2页 |
| 文件大小： | 649K |
| 代理商： | MPSA92M |
MPSA92
PNP Silicon High
Voltage Transistor
TO-92
Features
Through Hole Package
Operating
& Storage
Temperature: -
55
°
C to +1
50
°
C
Marking Code: A92
Electrical Characteristics @ 25
°
C Unless Otherwise Specified
Symbol
Parameter
OFF CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Breakdown Voltage*
(I
C
=-1.0mAdc, I
B
=0)
V
(BR)CBO
Collector-Base Breakdown Voltage
(I
C
=-100
μ
Adc, I
E
=0)
V
(BR)EBO
Emitter -Base Breakdown Voltage
(I
E
=-10
μ
Adc, I
C
=0)
I
EBO
Emitter Cutoff Current -0.25 uAdc
(V
EB
=-3.0Vdc, I
C
=0)
I
CBO
Collector Cutoff Current
(V
CB
=-200Vdc, I
E
=0)
ON CHARACTERISTICS
h
FE
DC Current Gain*
(I
C
=-1.0mAdc, V
CE
=-10Vdc)
(I
C
=-10mAdc, V
CE
=-10Vdc)
(I
C
=-50mAdc, V
CE
=-10Vdc)
V
CE(sat)
Collector-Emitter Saturation Voltage
(I
C
=-20mAdc, I
B
=-2.0mAdc)
V
BE(sat)
Base-Emitter Saturation Voltage
(I
C
=-20mAdc, I
B
=-2.0mAdc)
Min
Max
Units
-300 Vdc
-300 Vdc
-5.0 Vdc
-0.25 uAdc
25
80 250
25
-0.5
Vdc
SMALL-SIGNAL CHARACTERISTICS
f
T
Current Gain-Bandwidth Product
(I
C
=-10mAdc, V
CE
=-5Vdc, f=30MHz)
C
cb
Collector-Base Capacitance
(V
CB
=-20Vdc, I
E
=0, f=1.0MHz) 6.0
*Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
50
MHz
pF
MAXIMUM RATINGS
Symbol
VCEO
VCBO
VEBO
IC
RJA
RJC
INCHES
MIN
.175
.175
.500
.016
.135
.095
MM
DIM
A
B
C
D
E
G
MAX
.185
.185
---
.020
.145
.105
MIN
4.45
4.46
12.7
0.41
3.43
2.42
MAX
4.70
4.70
---
0.63
3.68
2.67
NOTE
Pin Configuration
Bottom View
C
B
E
A
E
B
C
D
G
www.
mc c semi
.c om
-0.9
Vdc
DIMENSIONS
Characteristic
Unit
Vdc
MPSA92
–300
–300
–5.0
–300
200
83.3
625
5.0
1.5
12
Collector–Emitter Voltage
Collector–Base Voltage
PD
PD
Thermal Resistance, Junction to Case
Total Device Dissipation @ TA = 25
°
C
Derate above 25
°
C
Thermal Resistance, Junction to Ambient
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
Collector Current — Continuous
Emitter–Base Voltage
Watts
mW/
°
C
mW
mW/
°
C
°
C/W
°
C/W
mAdc
Vdc
Vdc
omp
onents
21201 Itasca Street Chatsworth
!
"#
"#
$ %
!
M C C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MPSA92M_11 | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:HIGH VOLTAGE TRANSISTOR |
| MPSA92M1 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 300V V(BR)CEO | 500MA I(C) | SO |
| MPSA92RA | 功能描述:两极晶体管 - BJT PNP Transistor High Voltage RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MPSA92RA_Q | 功能描述:两极晶体管 - BJT PNP Transistor High Voltage RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MPSA92RL | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:High Voltage Transistors |
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