参数资料
型号: MPSA94A
元件分类: 小信号晶体管
英文描述: 300 mA, 480 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
封装: TO-92, 3 PIN
文件页数: 1/2页
文件大小: 69K
代理商: MPSA94A
2003. 12. 9
1/2
SEMICONDUCTOR
TECHNICAL DATA
MPSA94A
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 0
HIGH VOLTAGE APPLICATION.
FEATURES
High Breakdown Voltage.
MAXIMUM RATING (Ta=25 )
TO-92
DIM MILLIMETERS
A
B
C
D
F
G
H
J
K
L
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
D
1
2 3
B
A
J
K
G
H
F
L
E
C
E
C
M
N
0.45 MAX
M
1.00
N
1. EMITTER
3. COLLECTOR
2. BASE
+_
ELECTRICAL CHARACTERISTICS (Ta=25 )
*Pulse Test : Pulse Width 300 S, Duty Cycle 2%
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector-Base Breakdown Voltage
V(BR)CBO
IC=-100 A, IE=0
-480
-
V
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC=-1mA, IB=0
-480
-
V
Collector-Emitter Breakdown Voltage
V(BR)CES
IC=-100 A, IB=0
-480
-
V
Emitter-Base Breakdown Voltage
V(BR)EBO
IE=-10 A, IC=0
-6.0
-
V
Collector Cut off Current
ICBO
VCB=-400V, IE=0
-
-100
nA
Collector Cut off Current
ICES
VCE=-480V, IB=0
-
-1
A
Emitter Cutoff Current
IEBO
VEB=-4V, IC=0
-
-100
nA
DC Current Gain
*
hFE
VCE=-10V, IC=-1mA
40
-
VCE=-10V, IC=-10mA
50
-
300
VCE=-10V, IC=-50mA
45
-
VCE=-10V, IC=-100mA
40
-
Collector-Emitter Saturation Voltage
*
VCE(sat)1
IC=-1mA, IB=-0.1mA
-
-0.35
V
VCE(sat)2
IC=-20mA, IB=-2mA
-
-0.5
VCE(sat)3
IC=-50mA, IB=-5mA
-
-0.75
Base-Emitter Saturation Voltage
*
VBE(sat)
IC=-10mA, IB=-1mA
-
-0.75
V
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
-480
V
Collector-Emitter Voltage
VCEO
-480
V
Emitter-Base Voltage
VEBO
-6
V
Collector Current
IC
-300
mA
Collector Power Dissipation
PC
625
mW
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55 150
相关PDF资料
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MPSA94STOB 300 mA, 400 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
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