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参数资料
| 型号： | MPSH11J18Z |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | TO-92, 3 PIN |
| 文件页数： | 9/16页 |
| 文件大小： | 762K |
| 代理商： | MPSH11J18Z |
3
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Sustaining Voltage*
IC = 1.0 mA, IB = 0
25
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 100
A, I
E = 0
30
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10
A, I
C = 0
3.0
V
ICBO
Collector Cutoff Current
VCB = 25 V, IE = 0
100
nA
IEBO
Emitter Cutoff Current
VEB = 2.0 V, IC = 0
100
nA
ON CHARACTERISTICS
hFE
DC Current Gain
IC = 4.0 mA, VCE = 10 V
60
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 4.0 mA, IB = 0.4 mA
0.5
V
VBE(on)
Base-Emitter On Voltage
IC = 4.0 mA, VCE = 10 V
0.95
V
SMALL SIGNAL CHARACTERISTICS
*Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%
fT
Current Gain - Bandwidth Product
IC = 4.0 mA, VCE = 10 V,
f = 100 MHz
650
MHz
Ccb
Collector-Base Capacitance
VCB = 10 V, IE = 0, f = 1.0 MHz
0.7
pF
Crb
Common-Base Feedback Capacitance
VCB = 10 V, IE = 0, f = 1.0 MHz
0.6
0.9
pF
rb’Cc
Collector Base Time Constant
IC = 4.0 mA, VCB = 10 V,
f = 31.8 MHz
9.0
pS
Typical Characteristics
NPN RF Transistor
(continued)
MPSH1
1
/
MMBTH1
1
Collector- Emitter Saturation
Voltage vs Collector Current
0.1
1
10
20 30
0.05
0.1
0.15
0.2
I
- COLLECTOR CURRENT (mA)
V
-
C
O
LLE
C
T
O
R
-E
M
ITTE
R
V
O
L
T
A
G
E
(
V
)
CE
S
A
T
C
β = 10
125 °C
- 40 °C
25 °C
DC Current Gain
vs Collector Current
0.01
0.1
1
10
100
0
50
100
150
200
250
300
I - COLLECTOR CURRENT (mA)
h
-DC
P
U
L
S
E
D
CU
RR
E
N
T
G
A
IN
FE
C
V
= 5V
CE
125 °C
- 40 °C
25 °C
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