参数资料
型号: MPSH81
厂商: ON SEMICONDUCTOR
元件分类: 小信号晶体管
英文描述: Si, PNP, RF SMALL SIGNAL TRANSISTOR, TO-92
封装: PLASTIC, TO-226AA, 3 PIN
文件页数: 4/35页
文件大小: 320K
代理商: MPSH81
Packaging Specifications
6–8
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TO–92 EIA RADIAL TAPE IN FAN FOLD BOX OR ON REEL
REEL STYLES
ARBOR HOLE DIA.
30.5mm
± 0.25mm
MARKING NOTE
RECESS DEPTH
9.5mm MIN
48 mm
MAX
CORE DIA.
82mm
± 1mm
HUB RECESS
76.2mm
± 1mm
365mm + 3, – 0mm
38.1mm
± 1mm
Material used must not cause deterioration of components or degrade lead solderability
CARRIER STRIP
ADHESIVE TAPE
ROUNDED
SIDE
FEED
Rounded side of transistor and adhesive tape visible.
ADHESIVE TAPE ON REVERSE SIDE
CARRIER STRIP
FLAT SIDE
FEED
Flat side of transistor and carrier strip visible
(adhesive tape on reverse side).
CARRIER STRIP
ADHESIVE TAPE
FLAT SIDE
FEED
Flat side of transistor and adhesive tape visible.
Rounded side of transistor and carrier strip visible
(adhesive tape on reverse side).
FEED
ADHESIVE TAPE ON REVERSE SIDE
CARRIER STRIP
ROUNDED
SIDE
Figure 8. Reel Specifications
Figure 9. Style A
Figure 10. Style B
Figure 11. Style E
Figure 12. Style F
相关PDF资料
PDF描述
MPSL01ZL1 150 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPSL01RLRA 150 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPSL01RL1 150 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPSL01RLRM 150 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPSL01RLRE 150 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
相关代理商/技术参数
参数描述
MPSH81 D26Z 制造商:Fairchild Semiconductor Corporation 功能描述:Trans GP BJT PNP 20V 0.05A 3-Pin TO-92 T/R 制造商:Fairchild Semiconductor 功能描述:Trans GP BJT PNP 20V 0.05A 3-Pin TO-92 T/R
MPSH81/D75Z 制造商:Fairchild Semiconductor Corporation 功能描述:
MPSH81_D26Z 功能描述:射频双极小信号晶体管 PNP RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel
MPSH81_D27Z 功能描述:射频双极小信号晶体管 PNP RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel
MPSH81_D75Z 功能描述:射频双极小信号晶体管 PNP RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel