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参数资料
| 型号： | MPSW51RLRAG |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-226 |
| 封装： | LEAD FREE, CASE 29-10, TO-92, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 96K |
| 代理商： | MPSW51RLRAG |
Semiconductor Components Industries, LLC, 2010
August, 2010 Rev. 4
1
Publication Order Number:
MPSW51/D
MPSW51, MPSW51A
One Watt High Current
Transistors
PNP Silicon
Features
PbFree Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
MPSW51
MPSW51A
VCEO
30
40
Vdc
CollectorBase Voltage
MPSW51
MPSW51A
VCBO
40
50
Vdc
EmitterBase Voltage
VEBO
5.0
Vdc
Collector Current Continuous
IC
1000
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
1.0
8.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
2.5
20
W
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, JunctiontoAmbient
RqJA
125
°C/W
Thermal Resistance, JunctiontoCase
RqJC
50
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
MARKING DIAGRAM
MPS
W51x
AYWW G
G
x
= 51A Devices
A
= Assembly Location
Y
= Year
WW = Work Week
G
= PbFree Package
(Note: Microdot may be in either location)
COLLECTOR
3
2
BASE
1
EMITTER
1 2
3
1
2
BENT LEAD
TAPE & REEL
AMMO PACK
STRAIGHT LEAD
BULK PACK
3
TO92 1 WATT
(TO226)
CASE 2910
STYLE 1
相关PDF资料 |
PDF描述 |
|---|---|
| MPSW51RLRM | 1000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPSW51RLRE | 1000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPSW51RL1 | 1000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPSW51ARL | 1000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPSW51ARLRP | 1000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
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| MPSW55G | 功能描述:两极晶体管 - BJT 500mA 60V 1W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MPSW55RLRA | 功能描述:两极晶体管 - BJT 500mA 60V 1W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MPSW55RLRAG | 功能描述:两极晶体管 - BJT 500mA 60V 1W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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