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参数资料
| 型号： | MPTE-10B |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-201AD |
| 封装： | PLASTIC PACKAGE-2 |
| 文件页数： | 2/2页 |
| 文件大小： | 173K |
| 代理商： | MPTE-10B |
ICTE-5/MPTE-5*
ICTE-8/MPTE-8*
ICTE-10/MPTE-10
ICTE-12/MPTE-12
ICTE-15/MPTE-15
ICTE-18/MPTE-18*
ICTE-22/MPTE-22
ICTE-36/MPTE-36
ICTE-45/MPTE-45
Part
Number
Reverse
Standoff
Voltage
Vr
(Volts)
5.0
8.0
10.0
12.0
15.0
18.0
22.0
36.0
45.0
Minimum
Breakdown
Voltage
Vbr @1mA
(Volts)
6.0
9.4
11.7
14.1
17.6
21.2
25.9
42.4
52.9
Maximum
Reverse
Leakage
Ir @ Vr
(A)
300.0
25.0
2.0
Maximum
Clamping
Voltage
VC @ IPP 1=1A
(Volts)
7.1
11.3
13.7
16.1
20.1
24.2
29.8
50.6
63.3
Maximum
Peak Pulse
Current
IPP
(A)
160.0
100.0
90.0
70.0
60.0
50.0
40.0
23.0
19.0
Maximum
Clamping
Voltage
VC @ IPP 2=10A
(Volts)
7.5
11.5
14.1
16.5
20.6
25.2
32.0
54.3
70.0
ICTE-8C/MPTE-8C
ICTE-10C/MPTE-10C
ICTE-12C/MPTE-12C
ICTE-15C/MPTE-15C
ICTE-18C/MPTE-18C
ICTE-22C/MPTE-22C
ICTE-36C/MPTE-36C
ICTE-45C/MPTE-45C
8.0
10.0
12.0
15.0
18.0
22.0
36.0
45.0
9.4
11.7
14.1
17.6
21.2
25.9
42.4
52.9
50.0
2.0
11.4
14.1
16.7
20.8
24.8
30.8
50.6
63.3
100.0
90.0
70.0
60.0
50.0
40.0
23.0
19.0
11.6
14.5
17.1
21.4
25.5
32.0
54.3
70.0
ICTE-5 is not available in Bi-directional. Suffix ‘C’ denotes Bi-directional device. * Preferred voltages.
VF max = 3.5 Volts max at IF = 50A 300S square wave pulse
308
www .littelfuse .com
ELECTRICAL SPECIFICATION @ Tamb 25°C
Silicon Avalanche Diodes
Pulse Width (tp)
1
s
1.0
s10s
100
s
1.0ms
10ms
0.1
1.0
10
100
Pp
(kw)
Figure 2 - Peak Pulse Power Rating Curve
100,000
10,000
1000
100
1
2
510 20 5
0 100 200
Pulse width (tp)
Cj (pf)
TJ=2 5
°C
f=1.0 MHz
Vsig=50mVp-p
Measured at
Stand-Off
Voltage (VR)
Measured at
Zero Bias
V(BR)
- Breakdown Voltage - Volts
ICTE/MPTE Series
1500 Watt Axial Leaded Transient Voltage Suppressors
Figure 1 - Typical Junction Capacitance
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MPTE-10C | 制造商:MDE 制造商全称:MDE Semiconductor, Inc. 功能描述:GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR |
| MPTE-10C (1N6383) | 功能描述:TVS 二极管 - 瞬态电压抑制器 - RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| MPTE-10G | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:1500 Watt Peak Power Mosorb TM Zener Transient Voltage Suppressors |
| MPTE-10RL4 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:1500 Watt Peak Power Mosorb TM Zener Transient Voltage Suppressors |
| MPTE-10RL4G | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:1500 Watt Peak Power Mosorb TM Zener Transient Voltage Suppressors |
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