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参数资料
| 型号： | MPTE-10C |
| 厂商： | MOTOROLA INC |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE |
| 封装： | PLASTIC, CASE 41A-02, 2 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 56K |
| 代理商： | MPTE-10C |
Motorola TVS/Zener Device Data
4-2
500 Watt Peak Power Data Sheet
*ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) VF# = 3.5 V Max, IF** = 100 A) (C suffix denotes standard
ELECTRICAL CHARACTERISTICS back to back bidirectional versions. Test both polarities)
JEDEC
Breakdown
{{
Maximum
Mi
Maximum
Reverse
Voltage
Clamping Voltage
JEDEC
Breakdown
{{
Voltage
Maximum
Reverse
Maximum
Reverse
Voltage
@ IRSM{
Peak Pulse
JEDEC
Device
Note 1
Device
Note 1
VBR
Volts
Min
@ IT
(mA)
Reverse
Stand-Off
Voltage
VRWM***
(Volts)
Maximum
Reverse
Leakage
@ VRWM
IR (A)
Reverse
Surge
Current
IRSM{
(Amps)
@ IRSM{
(Clamping
Voltage)
VRSM
(Volts)
Peak Pulse
Current @
Ipp1{ = 1 A
VC1
(Volts max)
Peak Pulse
Current @
Ipp1{ = 10 A
VC2
(Volts max)
1N6373
ICTE-5/MPTE-5
6
1
5
300
160
9.4
7.1
7.5
1N6374
ICTE-8/MPTE-8
9.4
1
8
25
100
15
11.3
11.5
1N6382
ICTE-8C/MPTE-8C
9.4
1
8
25
100
15
11.4
11.6
1N6375
ICTE-10/MPTE-10
11.7
1
10
2
90
16.7
13.7
14.1
1N6383
ICTE-10C/MPTE-10C
11.7
1
10
2
90
16.7
14.1
14.5
1N6376
ICTE-12/MPTE-12
14.1
1
12
2
70
21.2
16.1
16.5
1N6384
ICTE-12C/MPTE-12C
14.1
1
12
2
70
21.2
16.7
17.1
1N6377
ICTE-15/MPTE-15
17.6
1
15
2
60
25
20.1
20.6
1N6385
ICTE-15C/MPTE-15C
17.6
1
15
2
60
25
20.8
21.4
1N6378
ICTE-18/MPTE-18
21.2
1
18
2
50
30
24.2
25.2
1N6386
ICTE-18C/MPTE-18C
21.2
1
18
2
50
30
24.8
25.5
1N6379
ICTE-22/MPTE-22
25.9
1
22
2
40
37.5
29.8
32
1N6387
ICTE-22C/MPTE-22C
25.9
1
22
2
40
37.5
30.8
32
1N6380
ICTE-36/MPTE-36
42.4
1
36
2
23
65.2
50.6
54.3
1N6388
ICTE-36C/MPTE-36C
42.4
1
36
2
23
65.2
50.6
54.3
1N6381
ICTE-45/MPTE-45
52.9
1
45
2
19
78.9
63.3
70
1N6389
ICTE-45C/MPTE-45C
52.9
1
45
2
19
78.9
63.3
70
NOTE 1: C suffix denotes standard back-to-back bidirectional versions. Test both polarities. JEDEC device types 1N6382 thru 1N6389 are registered as back to back bidirectional versions and
do not require a C suffix. 1N6373 thru 1N6381 are registered as unidirectional devices only (no bidirectional option).
*** Indicates JEDEC registered data.
*** 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
*** A transient suppressor is normally selected according to the maximum reverse stand-off voltage (VRWM), which should be equal to or greater than the dc or continuous peak operating
*** voltage level.
{ { Surge current waveform per Figure 5 and derate per Figure 2 of the General Data — 1500 W at the beginning of this group.
{{ VBR measured at pulse test current IT at an ambient temperature of 25°C.
# VF applies to unidirectional devices only.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MPTE-10C (1N6383) | 功能描述:TVS 二极管 - 瞬态电压抑制器 - RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| MPTE-10G | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:1500 Watt Peak Power Mosorb TM Zener Transient Voltage Suppressors |
| MPTE-10RL4 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:1500 Watt Peak Power Mosorb TM Zener Transient Voltage Suppressors |
| MPTE-10RL4G | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:1500 Watt Peak Power Mosorb TM Zener Transient Voltage Suppressors |
| MPTE-12 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors |
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