参数资料
型号: MPTE-18RL4
厂商: ON SEMICONDUCTOR
元件分类: TVS二极管 - 瞬态电压抑制
英文描述: 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
封装: PLASTIC, CASE 41A-04, 2 PIN
文件页数: 1/8页
文件大小: 60K
代理商: MPTE-18RL4
Semiconductor Components Industries, LLC, 2002
June, 2002 – Rev. 2
1
Publication Order Number:
1N6373/D
1N6373 - 1N6381 Series
(ICTE-5 - ICTE-36,
MPTE-5 - MPTE-45)
1500 Watt Peak Power
Mosorb Zener Transient
Voltage Suppressors
Unidirectional*
Mosorb devices are designed to protect voltage sensitive
components from high voltage, high–energy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. These devices are
ON Semiconductor’s exclusive, cost-effective, highly reliable
Surmetic
axial leaded package and are ideally-suited for use in
communication systems, numerical controls, process controls,
medical equipment, business machines, power supplies and many
other industrial/consumer applications, to protect CMOS, MOS and
Bipolar integrated circuits.
Specification Features:
Working Peak Reverse Voltage Range – 5 V to 45 V
Peak Power – 1500 Watts @ 1 ms
ESD Rating of Class 3 (>16 KV) per Human Body Model
Maximum Clamp Voltage @ Peak Pulse Current
Low Leakage < 5 mA Above 10 V
Response Time is Typically < 1 ns
Mechanical Characteristics:
CASE:
Void-free, transfer-molded, thermosetting plastic
FINISH:
All external surfaces are corrosion resistant and leads are
readily solderable
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:
230
°C, 1/16″ from the case for 10 seconds
POLARITY:
Cathode indicated by polarity band
MOUNTING POSITION:
Any
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation (Note 1.)
@ TL ≤ 25°C
PPK
1500
Watts
Steady State Power Dissipation
@ TL ≤ 75°C, Lead Length = 3/8″
Derated above TL = 75°C
PD
5.0
20
Watts
mW/
°C
Thermal Resistance, Junction–to–Lead
RqJL
20
°C/W
Forward Surge Current (Note 2.)
@ TA = 25°C
IFSM
200
Amps
Operating and Storage
Temperature Range
TJ, Tstg
– 65 to
+175
°C
*Please see 1N6382 – 1N6389 (ICTE–10C – ICTE–36C, MPTE–8C – MPTE–45C)
for Bidirectional Devices
AXIAL LEAD
CASE 41A
PLASTIC
L = Assembly Location
MPTE–xx = ON Device Code
ICTE–xx = ON Device Code
1N63xx = JEDEC Device Code
YY = Year
WW = Work Week
Cathode
Anode
Device
Package
Shipping
ORDERING INFORMATION
MPTE–xx
Axial Lead
500 Units/Box
MPTE–xxRL4
Axial Lead
1500/Tape & Reel
ICTE–xx
Axial Lead
500 Units/Box
ICTE–xxRL4
Axial Lead
1500/Tape & Reel
NOTES:
L
ICTE
–xx
YYWW
1N63xx
Axial Lead
500 Units/Box
1N63xxRL4*
Axial Lead
1500/Tape & Reel
L
MPTE
–xx
1N
63xx
YYWW
1. Nonrepetitive current pulse per Figure 5 and der-
ated above TA = 25°C per Figure 2.
2. 1/2 sine wave (or equivalent square wave), PW =
8.3 ms, duty cycle = 4 pulses per minute maxi-
mum.
http://onsemi.com
*1N6378 Not Available in 1500/Tape & Reel
相关PDF资料
PDF描述
MPZ5-180C 40000 W, UNIDIRECTIONAL, SILICON, TVS DIODE
MQ1N6508 UNIDIRECTIONAL, 16 ELEMENT, SILICON, TVS DIODE
MSP1N6508 UNIDIRECTIONAL, 16 ELEMENT, SILICON, TVS DIODE
MQUMA5819 1 A, 40 V, SILICON, SIGNAL DIODE
MQUPS340E3 3 A, 40 V, SILICON, RECTIFIER DIODE
相关代理商/技术参数
参数描述
MPTE-22 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors
MPTE-22 (1N6379) 功能描述:TVS 二极管 - 瞬态电压抑制器 - RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
MPTE-22C 制造商:MDE 制造商全称:MDE Semiconductor, Inc. 功能描述:GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR
MPTE-22C (1N6387) 功能描述:TVS 二极管 - 瞬态电压抑制器 - RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
MPTE-22G 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:1500 Watt Peak Power Mosorb TM Zener Transient Voltage Suppressors