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参数资料
| 型号： | MPZ2012S101A |
| 厂商： | Texas Instruments, Inc. |
| 英文描述： | 2.7-W CONSTANT OUTPUT POWER CLASS-D AUDIO AMPLIFIER WITH INTEGRATED BOOST CONVERTER |
| 中文描述： | 2.7钨恒定输出功率D类音频放大器，具有集成升压转换器 |
| 文件页数： | 13/28页 |
| 文件大小： | 753K |
| 代理商： | MPZ2012S101A |
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BYPASSING THE BOOST CONVERTER
Toko
1098AS-4R7M
ToshibaCRS06
SchottkyDiode
V
DD
SW
IN–
IN+
AGND
PGND
VOUT+
VOUT–
V
OUT
CC
V
IN
CC
22 F
m
22 F
m
1 F
m
ToBattery
Left
Channel
Input
C
IN
C
IN
V
FB
CC
SDb
SDd
GAIN
4.7 H
m
GND=Bypass
V
=BoostMode
DD
1 F
m
R1
50k
R2
500k
TPA2013D1
GPIO
EFFICIENCY AND THERMAL INFORMATION
JA
1
=
= 80.64 C/W
Derating Factor
0.0124
q
°
(8)
TPA2013D1
SLOS520 – AUGUST 2007
Bypass the boost converter to drive the Class-D amplifier directly from the battery. Place a Shottky diode
between the SW pin and the VCCIN pin. Select a diode that has an average forward current rating of at least 1A,
reverse breakdown voltage of 10 V or greater, and a forward voltage as small as possible. See Figure 34 for an
example of a circuit designed to bypass the boost converter.
Do not configure the circuit to bypass the boost converter if VDD is higher than VCC when the boost converter is
enabled (SDb
≥ 1.3 V); VDD must be lower than VCC for proper operation. VDD may be set to any voltage within
the recommended operating range when the boost converter is disabled (SDb
≤ 0.3V).
Place a logic high on SDb to place the TPA2013D1 in boost mode. Place a logic low on SDb to place the
TPA2013D1 in bypass mode.
Figure 34. Bypass Circuit
The maximum ambient temperature depends on the heat-sinking ability of the PCB system. The derating factors
for the YZH and RGP packages are shown in the dissipation rating table. Apply the same principles to both
packages. Using the YZH package, and converting this to
θJA:
Given
θJA of 80.64°C/W, the maximum allowable junction temperature of 150°C, and the maximum internal
dissipation of 0.317 W (VDD = 3.6 V, PO = 1.7 W), the maximum ambient temperature is calculated with the
following equation:
20
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Copyright 2007, Texas Instruments Incorporated
Product Folder Link(s): TPA2013D1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MPZ2012S101AT | 制造商:TDK Innoveta 功能描述:Ferrite Beads Multi-Layer Chip Bead 100Ohm 25% 100MHz 4A 0805 T/R |
| MPZ2012S101AT000 | 制造商:TDK 功能描述: |
| MPZ2012S101ATD25 | 制造商:TDK 功能描述:FERRITE CHIP BEADS - Tape and Reel |
| MPZ2012S102A | 功能描述:电磁干扰滤波珠子、扼流圈和阵列 0805 1000ohms 100MHz Rdc 0.15ohms 1.5A RoHS:否 制造商:AVX 阻抗: 最大直流电流:35 mA 最大直流电阻: 容差: 端接类型:SMD/SMT 电压额定值:25 V 工作温度范围:- 25 C to + 85 C 封装 / 箱体:0603 (1608 metric) |
| MPZ2012S102AT | 制造商:TDK 功能描述:Ferrite Beads Multi-Layer Chip Bead 1KOhm 25% 100MHz 1.5A 0805 制造商:TDK 功能描述:MPZ Series 1 kO 25 % 100 MHz 1.5 A 0805 Multi-Layer Chip Ferrite Bead 制造商:TDK 功能描述:MPZ Series 1 kO ?25 % 100 MHz 1.5 A 0805 Multi-Layer Chip Ferrite Bead |
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