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参数资料
| 型号： | MQ1N4767A |
| 厂商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 9.1 V, SILICON, VOLTAGE REFERENCE DIODE, DO-204AA |
| 封装： | HERMETIC SEALED, GLASS, DO-7, 2 PIN |
| 文件页数： | 2/2页 |
| 文件大小： | 252K |
| 代理商： | MQ1N4767A |
9.1 Volt Temperature Compensated Zener
Reference Diodes
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
Copyright
2003
8-19-2003 REV A
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SCOTTSD A L E DIVISION
1N4765 thru 1N4774A
1N
47
65
–
1N
47
74
A
*ELECTRICAL CHARACTERISTICS @ 25oC
ZENER
VOLTAGE
(Note 3)
ZENER
TEST
CURRENT
MAXIMUM
DYNAMIC
IMPEDANCE
MAXIMUM
REVERSE
CURRENT
IR @ 6 V
MAXIMUM
VOLTAGE
TEMPERATURE
STABILITY
(Note 2 & 3)
TEMPERATURE
RANGE
EFFECTIVE
TEMPERATURE
COMPENSIATIONS
αVZ
VZ @ IZT
IZT
ZZT
IR
VZT
JEDEC
TYPE
NUMBER
VOLTS
mA
OHMS
A
mV
oC
%/
oC
1N4765
1N4765A
1N4766
1N4766A
9.1
0.5
350
10
68
141
34
70
0 to + 75
-55 to +100
0 to + 75
-55 to +100
0.01
0.005
1N4767
1N4767A
1N4768
1N4768A
9.1
0.5
350
10
14
28
7
14
0 to + 75
-55 to +100
0 to + 75
-55 to +100
0.002
0.001
1N4769
1N4769A
1N4770
1N4770A
9.1
0.5
1.0
350
200
10
3
7
68
141
0 to + 75
-55 to +100
0 to + 75
-55 to +100
0.0005
0.01
1N4771
1N4771A
1N4772
1N4772A
9.1
1.0
200
10
34
70
14
28
0 to + 75
-55 to +100
0 to + 75
-55 to +100
0.005
0.002
1N4773
1N4773A
1N4774
1N4774A
9.1
1.0
200
10
7
14
3
7
0 to + 75
-55 to +100
0 to + 75
-55 to +100
0.001
0.005
*JEDEC Registered Data.
NOTES:
1.
Measured by superimposing IZ ac rms on IZ dc @ +25
oC where IZ ac rms = 10% IZ dc.
2.
Maximum allowable change between any two discrete temperatures over the specified temperature range.
3.
Voltage measurements to be performed 15 seconds after application of dc current.
4.
Designate Radiation Hardened devices with “RH” prefix instead of “1N”, i.e., RH4774A.
5.
Consult factory for TX, TXV or JANS equivalent SCDs.
PACKAGE DIMENSIONS
All dimensions in: INCH
mm
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