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参数资料
| 型号： | MQ1N4768 |
| 厂商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 9.1 V, SILICON, VOLTAGE REFERENCE DIODE, DO-204AA |
| 封装： | HERMETIC SEALED, GLASS, DO-7, 2 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 252K |
| 代理商： | MQ1N4768 |
9.1 Volt Temperature Compensated Zener
Reference Diodes
SCOTTSD A L E DIVISION
1N4765 thru 1N4774A
W
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74
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A
DESCRIPTION
APPEARANCE
The 1N4765 thru 1N4774A series of Zero-TC Reference Diodes provides a
selection of 9.1 V nominal voltages and temperature coefficients to as low
as 0.0005%/oC for minimal voltage change with temperature when operated
at 7.5 mA. Options for screening similar to JAN, JANTX, JANTXV, and
JANS also exist by using MQ, MX, MV or MSP respectively for part number
prefixes and high reliability screening. Microsemi also offers numerous
other Zener Reference Diode products for a variety of other voltages from
6.2 V to 200 V
DO-7
(DO-204AA)
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
JEDEC registered 1N935 thru 1N940 series
Standard reference voltage of 9.1V +/- 5%
Internal metallurgical bonds
JANS Equivalent available via SCD
Options for screening in accordance with MIL-
PRF-19500 for JAN, JANTX, JANTXV, and
JANS are available by adding MQ, MX, MV, or
MSP prefixes respectively to part numbers. For
example, designate “MX1N4769A” for a JANTX
screen
Radiation Hardened devices available by
changing “1N” prefix to “RH”, e.g. RH4769A, RH
4774A, etc. Also consult factory for “RH” data
sheet brochure for other radiation hardened
reference diode products.
Provides minimal voltage changes over a broad
temperature range for instrumentation and other
circuit designs requiring a voltage reference
Temperature coefficient selections available
from 0.01%/C to 0.0005%/C
Tight voltage tolerances available by adding
tolerance 1%, 2%, 3%, etc. after part number for
further identification, e.g. 1N4773A-2%,
1N4774A-1%, 1N4769-3%, 1N4769A-1%, etc.
Flexible axial-leaded mounting terminals
Nonsensitive to ESD per MIL-STD-750 Method
1020
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
Operating & StorageTemperature: -65
oC to
+175
oC
DC Power Dissipation: 250 mW @ TL = 25
oC
NOTE: For optimum voltage-temperature
stability, the test current IZT = 0.5 or 1.0 mA as
shown in Electrical Characteristics (less than 10
mW in dissipated power)
Solder temperatures: 260
oC for 10 s (maximum)
CASE: Hermetically sealed glass case with
DO-7 (DO-204AA) package
TERMINALS: Tin-lead plated and solderable
per MIL-STD-750, Method 2026
MARKING: Part number and cathode band
POLARITY: Reference diode to be operated
with the banded end positive with respect to the
opposite end
TAPE & REEL option: Standard per EIA-296
(add “TR” suffix to part number)
WEIGHT: 0.2 grams.
See package dimensions on last page
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
Copyright
2003
8-19-2003 REV A
相关PDF资料 |
PDF描述 |
|---|---|
| MSP1N4770ATR | 9.1 V, SILICON, VOLTAGE REFERENCE DIODE, DO-204AA |
| MSP1N4774ATR | 9.1 V, SILICON, VOLTAGE REFERENCE DIODE, DO-204AA |
| MV1N4773ATR | 9.1 V, SILICON, VOLTAGE REFERENCE DIODE, DO-204AA |
| MX1N4781TR | 8.5 V, SILICON, VOLTAGE REFERENCE DIODE, DO-204AA |
| MQ1N4688DTR | 4.7 V, 0.417 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AA |
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