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参数资料
| 型号： | MQ1N4783ATR |
| 厂商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 8.5 V, SILICON, VOLTAGE REFERENCE DIODE, DO-204AA |
| 封装： | HERMETIC SEALED, GLASS, DO-7, 2 PIN |
| 文件页数： | 2/2页 |
| 文件大小： | 255K |
| 代理商： | MQ1N4783ATR |
8.5 Volt Temperature Compensated Zener
Reference Diodes
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
Copyright
2003
8-19-2003 REV A
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SCOTTSD A L E DIVISION
1N4775 thru 1N4784A
1N
47
75
–
1N
47
84
A
*ELECTRICAL CHARACTERISTICS @ 25oC, unless otherwise specified
ZENER
VOLTAGE
(Note 5)
ZENER
TEST
CURRENT
MAXIMUM
DYNAMIC
IMPEDANCE
MAXIMUM
REVERSE
CURRENT
IR @ 6 V
MAXIMUM
VOLTAGE
TEMPERATURE
STABILITY
(Note 3 & 5)
TEMPERATURE
RANGE
EFFECTIVE
TEMPERATURE
COMPENSIATIONS
αVZ
VZ @ IZT
IZT
ZZT
IR
VZT
JEDEC
TYPE
NUMBER
VOLTS
mA
OHMS
A
mV
oC
%/
oC
1N4775
1N4775A
1N4776
1N4776A
8.5
0.5
200
10
64
132
32
66
0 to + 75
-55 to +100
0 to + 75
-55 to +100
0.01
0.005
1N4777
1N4777A
1N4778
1N4778A
8.5
0.5
200
10
13
26
6
13
0 to + 75
-55 to +100
0 to + 75
-55 to +100
0.002
0.001
1N4779
1N4779A
1N4780
1N4780A
8.5
0.5
1.0
200
100
10
3
7
64
132
0 to + 75
-55 to +100
0 to + 75
-55 to +100
0.0005
0.01
1N4781
1N4781A
1N4782
1N4782A
8.5
1.0
100
10
32
66
13
26
0 to + 75
-55 to +100
0 to + 75
-55 to +100
0.005
0.002
1N4783
1N4783A
1N4784
1N4784A
8.5
1.0
100
10
6
13
3
7
0 to + 75
-55 to +100
0 to + 75
-55 to +100
0.001
0.0005
*JEDEC Registered Data.
NOTES:
1.
Designate Radiation Hardened devices with “RH” prefix instead of “1N,” i.e., RH4784A. Consult factory for TX, TXV or
JANS equivalent SCDs.
2.
Measured by superimposing IZ ac rms on IZ dc @ 25
oC where IZ ac rms = 10% IZ dc.
3.
Maximum allowable change between any two discrete temperatures over the specified temperature change.
4.
When ordering devices with a tighter tolerance than specified, use a nominal center voltage of 8.4 volts.
5.
Voltage measurements to be performed 15 seconds after application of dc current.
PACKAGE DIMENSIONS
All dimensions in: INCH
mm
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