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参数资料
| 型号： | MQ1N5235BE3 |
| 厂商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分类： | 齐纳二极管 |
| 英文描述： | 6.8 V, 0.417 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AA |
| 封装： | ROHS COMPLIANT, HERMETIC SEALED, GLASS, DO-7, 2 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 223K |
| 代理商： | MQ1N5235BE3 |
500 mW GLASS AXIAL-LEAD
ZENER DIODES
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
1N5221 thru 1N5281,e3 DO-7
1N5
221
─
1N
5281
B,
e3
DO
-7
Max Reverse Leakage Current
Max Zener Impedance
A & B Suffix Only
Note 2
A, B, C & D Suffix Only
Non-Suffix
IR
@
VR
μA
Volts
JEDEC
Type No.
Note 1
Nominal
Zener
Voltage
VZ @ IZT
Volts
Test
Current
IZT
mA
ZZT @ IZK
Ohms
ZZK @ IZK = 0.25
mA
Ohms
A
B,C & D
IR @ VR Used
For Suffix A
μA
Max Zener
Voltage Temp.
Coeff.
(A & B Suffix
Only)
αVZ (% / oC)
Note 3
1N5231
1N5232
1N5233
1N5234
1N5235
5.1
5.6
6.0
6.2
6.8
20
17
11
7.0
5.0
1600
1000
750
5.0
3.0
1.9
2.9
3.3
3.8
4.8
2.0
3.0
3.5
4.0
5.0
50
30
+/-0.030
+0.038
+0.045
+0.050
1N5236
1N5237
1N5238
1N5239
1N5240
7.5
8.2
8.7
9.1
10
20
6.0
8.0
10
17
500
600
3.0
5.7
6.2
6.7
7.6
6.0
6.5
7.0
8.0
30
+0.058
+0.062
+0.065
+0.068
+0.075
1N5241
1N5242
1N5243
1N5244
1N5245
11
12
13
14
15
20
9.5
9.0
8.5
22
30
13
15
16
600
2.0
1.0
0.5
0.1
8.0
8.7
9.4
9.5
10.5
8.4
9.1
9.9
10
11
30
10
+0.076
+0.077
+0.079
+0.082
1N5246
1N5247
1N5248
1N5249
1N5250
16
17
18
19
20
7.8
7.4
7.0
6.6
6.2
17
19
21
23
25
600
0.1
11.4
12.4
13.3
14.3
12
13
14
15
10
+0.083
+0.084
+0.085
+0.086
1N5251
1N5252
1N5253
1N5254
1N5255
22
24
25
27
28
5.6
5.2
5.0
4.6
4.5
29
33
35
41
44
600
0.1
16.2
17.1
18.1
20
17
18
19
21
10
+0.087
+0.088
+0.089
+0.090
+0.091
1N5256
1N5257
1N5258
1N5259
1N5260
30
33
36
39
43
4.2
3.8
3.4
3.2
3.0
49
58
70
80
93
600
700
800
900
0.1
22
24
26
29
31
23
25
27
30
33
10
+0.091
+0.092
+0.093
+0.094
+0.095
1N5261
1N5262
1N5263
1N5264
1N5265
47
51
56
60
62
2.7
2.5
2.2
2.1
2.0
105
125
150
170
185
1000
1100
1300
1400
0.1
34
37
41
44
45
36
39
43
46
47
10
+0.095
+0.096
+0.097
1N5266
1N5267
1N5268
1N5269
1N5270
68
75
82
87
91
1.8
1.7
1.5
1.4
230
270
330
370
400
1600
1700
2000
2200
2300
0.1
49
53
59
65
66
52
56
62
68
69
10
+0.097
+0.098
+0.099
1N5271
1N5272
1N5273
1N5274
1N5275
100
110
120
130
140
1.3
1.1
1.0
0.95
0.90
500
750
900
1100
1300
2600
3000
4000
4500
0.1
72
80
86
94
101
76
84
91
99
106
10
+0.110
1N5276
1N5277
1N5278
1N5279
1N5280
1N5281
150
160
170
180
190
200
0.85
0.80
0.74
0.68
0.66
0.65
1500
1700
1900
2200
2400
2500
5000
5500
6000
6500
7000
0.1
108
116
123
130
137
144
114
122
129
137
144
152
10
+0.110
*JEDEC registered data. JEDEC type numbers listed indicate a tolerance of +/-20% with guaranteed limits on only VZ, IR, and VF. Devices with
guaranteed limits on all six parameters are indicated by suffix A for +/-10% tolerance and suffix B for +/-5% tolerance. Also available with suffix C
or D which indicates 2% and 1% tolerance respectively.
NOTES:
1.
The electrical characteristics are measured after allowing the device to stabilize for 20 seconds when mounted with a 3/8” (10 mm) minimum
lead length from the case.
2.
The zener impedance is derived from the 60 Hz ac voltage that results when an ac current having an rms value equal to 10% of the dc zener
current (IZT or IZK) is superimposed on IZT or IZK. Zener impedance is measured at two points to ensure a sharp knee on the breakdown curve,
thereby eliminating unstable units. Also see MicroNote 202 for variation in dynamic impedance with different operating currents.
3.
Temperature coefficient (
αVZ). Test conditions for temperature coefficient are as follows:
a.
IZT = 7.5 mA, T1 = 25
oC, T
2 = 125
oC (1N5221A, B thru 1N5242A, B).
b.
IZT = Rated IZT, T1 = 25
oC, T
2 = 125
oC (1N5243A, B thru 1N5281A, B).
(Device to be temperature stabilized with current applied prior to reading breakdown voltage at the specified ambient temp.)
Microsemi
Scottsdale Division
Page 2
Copyright
2005
8-29-2005 REV B
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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