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参数资料
| 型号： | MQ1N6372E3 |
| 厂商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-202AA |
| 封装： | ROHS COMPLIANT, HERMETIC SEALED, METAL, DO-13, 2 PIN |
| 文件页数： | 3/3页 |
| 文件大小： | 165K |
| 代理商： | MQ1N6372E3 |
1500 W LOW CLAMPING FACTOR
TRANSIENT VOLTAGE SUPPRESSOR
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 3
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
1N6356 thru 1N6372, e3
or MPT-5 thru MPT-45C, e3
1N6
356
thru
1N6
372,
e3
MPT-5
th
ru
MPT-45
C,
e3
Pulse time duration (tp) is
defined as that point where
IP decays to 50% of peak
value (IPP).
Peak Value
IPP
Pulse
current
(I
P)
in
percent
of
I
PP
time (t) in milliseconds
FIGURE 4
FIGURE 3
Typical Capacitance vs. Breakdown Voltage
Pulse wave form for exponential surge
(Unidirectional Types)
PACKAGE DIMENSIONS
FIGURE 5
Typical Capacitance vs. Breakdown Voltage
(Bidirectional Types)
FIG. 5
Steady-state power derating curve
Stead
y-
sta
te
po
w
er
dissi
pat
io
n
(wa
tts
)
TL – lead Temperature
oC
Copyright
2007
10-03-2007 REV C
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