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参数资料
| 型号： | MQ1N6506 |
| 厂商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | UNIDIRECTIONAL, 8 ELEMENT, SILICON, TVS DIODE |
| 封装： | HERMETIC SEALED, CERAMIC, DIP-14 |
| 文件页数： | 2/2页 |
| 文件大小： | 80K |
| 代理商： | MQ1N6506 |
Isolated Diode Array with
HiRel MQ, MX, MV, and MSP Screening Options
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
1N6506
SYMBOLS & DEFINITIONS
Symbol
DEFINITION
VBR
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current
VF
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current
IR
Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and
temperature
IFSM
Forward Surge Current: The peak forward surge current at a specified pulse width
Ct
Capacitance: The capacitance of the TVS as defined @ 0 volts at a frequency of 1 MHz and stated in
picofarads
SCHEMATIC
PACKAGE DIMENSIONS
CIRCUIT
Supply rail (+VCC)
GND (or -VCC)
Steering Diode Application
FIGURE 1
I/O Port
Microsemi
Scottsdale Division
Page 2
Copyright
2006
5-1-2006 REV D
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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