参数资料
型号: MQ2N3822UB
厂商: MICROSEMI CORP-LAWRENCE
元件分类: 小信号晶体管
英文描述: Si, N-CHANNEL, RF SMALL SIGNAL, JFET
封装: CERAMIC PACKAGE-3
文件页数: 1/4页
文件大小: 225K
代理商: MQ2N3822UB
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
N-CHANNEL J-FET DEPLETION MODE
Equivalent to MIL-PRF-19500/375
T4-LDS-0005 Rev. 2 (101425)
Page 1 of 4
DEVICES
LEVELS
2N3821
2N3821UB
MQ = JAN Equivalent
2N3822
2N3822UB
MX = JANTX Equivalent
2N3823
2N3823UB
MV = JANTXV Equivalent
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
2N3821, UB
2N3822, UB
2N3823, UB
Unit
Gate-Source Voltage
VGSR
50
30
V
Drain-Source Voltage
VDS
50
30
V
Drain-Gate Voltage
VDG
50
30
V
Gate Current
IGF
10
mA
Power Dissipation
TA = +25°C
(1)
PT
300
mW
Operating Junction & Storage
Temperature Range
Tj, Tstg
-55 to + 200
°C
Note: (1) Derate linearly 1.7mW/°C for TA > +25°C.
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
OFF CHARACTERTICS
Gate-Source Breakdown Voltage
VDS = 0, IG = 1.0μA dc
2N3821 / UB
2N3822 / UB
2N3823 / UB
V(BR)GSSR
50
30
Vdc
Gate Reverse Current
VDS = 0, VGS = 30V dc
VDS = 0, VGS = 20V dc
2N3821 / UB
2N3822 / UB
2N3823 / UB
IGSSR
0.1
0.5
ηA
Zero-Gate-Voltage Drain Current
VGS = 0, VDS = 15V dc
2N3821 / UB
2N3822 / UB
2N3823 / UB
IDSS
0.5
2.0
4.0
2.5
10
20
mA
Gate-Source Voltage
VDS = 15V dc, ID = 50μA dc
VDS = 15V dc, ID = 200μA dc
VDS = 15V dc, ID = 400μA dc
2N3821 / UB
2N3822 / UB
2N3823 / UB
VGS
0.5
1.0
2.0
4.0
7.5
Vdc
Gate-Source Cutoff Voltage
VDS = 15V dc, ID = 0.5ηA dc
2N3821 / UB
2N3822 / UB
2N3823 / UB
VGS(off)
4.0
6.0
8.0
Vdc
TO-72 (TO-206AF)
UB - Package
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