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参数资料
| 型号： | MQRT65KP75A |
| 厂商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 65000 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| 封装： | PLASTIC PACKAGE-2 |
| 文件页数： | 2/3页 |
| 文件大小： | 112K |
| 代理商： | MQRT65KP75A |
AIRCRAFT DC POWER BUS PROTECTION
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
RT65KP48A thru RT65KP75CA, e3
RT65KP48
A
–75CA,
e3
GRAPHS
NOTE: This PPP versus time graph allows the designer to use
these parts over a broad power spectrum using the guidelines
illustrated in App Note 104 on Microsemi’s website. Aircraft
transients are described with exponential decaying waveforms.
For suppression of square-wave impulses, derate power and
current to 66% of that for exponential decay as shown in Figure 1.
P
PP
Peak
Pulse
Power
vs.
Pulse
Time
–
kW
Non-Re
p
etitive
Pulse
Peak
Pulse
Power
(P
PP
)or
cont
inuous
Power
in
%
o
f25
o C
ratin
g
tp – Pulse Time – sec.
TL Lead Temperature oC
FIGURE 1
FIGURE 2
Peak Pulse Power vs. Pulse Time
POWER DERATING
To 50% of Exponentially Decaying Pulse
Correct
Microsemi
Scottsdale Division
Page 2
Copyright
2007
6-20-2007 REV B
Wrong
FIGURE 3
FIGURE 5
FIGURE 4
FIGURE 6
INSTALLATION
TVS devices used across power lines are
subject to relatively high magnitude surge
currents and are more prone to adverse
parasitic inductance effects in the mounting
leads. Minimizing the shunt path of the lead
inductance and their V= -Ldi/dt effects will
optimize the TVS effectiveness. Examples
of optimum installation and poor installation
are illustrated in figures 3 through figure 6.
Figure
3
illustrates
minimal
parasitic
inductance with attachment at end of device.
Inductive voltage drop is across input leads.
Virtually no “overshoot” voltage results as
illustrated with figure 4.
The loss of
effectiveness
in
protection
caused
by
excessive parasitic inductance is illustrated
in figures 5 and 6. Also see MicroNote 111
for further information on “Parasitic Lead
Inductance in TVS”.
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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