参数资料
型号: MQSMBJP6KE11AE3TR
厂商: MICROSEMI CORP-SCOTTSDALE
元件分类: TVS二极管 - 瞬态电压抑制
英文描述: 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
封装: ROHS COMPLIANT, PLASTIC, SMBJ, 2 PIN
文件页数: 4/4页
文件大小: 215K
代理商: MQSMBJP6KE11AE3TR
600 Watt TRANSIENT VOLTAGE
SUPPRESSOR
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
SMBJP6KE6.8 thru SMBJP6KE200CA, e3 and
SMBGP6KE6.8 thru SMBGP6KE200CA, e3
SMBJ(G)P6
K
E6.8-200
Ae
3
C
Ca
pa
cita
nce
-
Pi
cofarads
Peak
Pulse
Power
(
P
PP
)or
conti
nuous
Power
in
P
ercent
of
25
o C
Rating
TL Lead Temperature
oC
V(BR) - Breakdown Voltage – Volts
FIGURE 3 - Derating Curve
FIGURE 4 – SMBJ(G)P6KE series Typical Capacitance vs.
Breakdown Voltage
PACKAGE DIMENSIONS
SMBJ
SMBG
A
B
C
D
E
F
K
L
MIN
.077
.160
.130
.205
.077
.235
.015
.030
MAX
.083
.180
.155
.220
.104
.255
.030
.060
DIMENSIONS IN MILLIMETERS
MIN
1.96
4.06
3.30
5.21
1.95
5.97
.381
.760
MAX
2.10
4.57
3.94
5.59
2.65
6.48
.762
1.520
INCHES
mm
A
.260
6.60
B
.085
2.16
C
.110
2.79
INCHES
mm
A
0.320
8.13
B
0.085
2.16
C
0.110
2.79
SMBJ
SMBG
Microsemi
Scottsdale Division
Page 4
Copyright
2007
6-21-2007 Rev C
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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MQSMBJP6KE130TR 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
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