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参数资料
| 型号： | MR256D08BMA45 |
| 厂商： | Everspin Technologies Inc |
| 文件页数： | 1/15页 |
| 文件大小： | 0K |
| 描述： | IC MRAM 256KB 45NS 48BGA |
| 标准包装： | 348 |
| 格式 - 存储器： | RAM |
| 存储器类型： | MRAM（磁阻 RAM） |
| 存储容量： | 256K (32K x 8) |
| 速度： | 45ns |
| 接口： | 并联 |
| 电源电压： | 3 V ~ 3.6 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 48-LFBGA |
| 供应商设备封装： | 48-FBGA（8x8） |
| 包装： | 托盘 |
| 其它名称： | 819-1033 |
MR256D08B
FEATURES
? +3.3 Volt power supply
? I/O Voltage range supports wide +1.65 to +3.6 Volt interfaces
? Fast 45 ns read/write cycle
? SRAM compatible timing
? Unlimited read & write endurance
? Data always non-volatile for >20-years at temperature
? RoHS-compliant small footprint BGA package
BENEFITS
? One memory replaces FLASH, SRAM, EEPROM and BBSRAM in systems
for simpler, more efficient designs
? Improves reliability by replacing battery-backed SRAM
Dual Supply 32K x 8 MRAM
RoHS
INTRODUCTION
The MR256D08B is a 262,144-bit magnetoresistive random access memory (MRAM) device organized as
32,768 words of 8 bits. It supports I/O voltages from +1.65 to +3.6 volts. The MR256D08B offers SRAM
compatible 45ns read/write timing with unlimited endurance. Data is always non-volatile for greater than
20-years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes
with voltage out of specification. The MR256D08B is the ideal memory solution for applications that must
permanently store and retrieve critical data and programs quickly.
The MR256D08B is available in small footprint 8 mm x 8 mm, 48-pin ball grid array (BGA) package with
0.75 mm ball centers.
The MR256D08B provides highly reliable data storage over a wide range of temperatures. The product is
offered with commercial temperature (0 to +70 °C).
CONTENTS
1. DEVICE PIN ASSIGNMENT......................................................................... 2
2. ELECTRICAL SPECIFICATIONS................................................................. 4
3. TIMING SPECIFICATIONS.......................................................................... 8
4. ORDERING INFORMATION....................................................................... 13
5. MECHANICAL DRAWING.......................................................................... 14
6. REVISION HISTORY...................................................................................... 15
How to Reach Us.......................................................................................... 15
Everspin Technologies ? 2011
1
MR256D08B Rev. 3, 12/2011
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相关代理商/技术参数 |
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| MR256D08BMA45R | 功能描述:NVRAM 256Kb 3.3V 45ns 32Kx8 Parallel MRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| MR256DL08BMA45 | 功能描述:IC MRAM 256KBIT 45NS 48FBGA 制造商:everspin technologies inc. 系列:- 包装:托盘 零件状态:有效 格式 - 存储器:RAM 存储器类型:MRAM（磁阻 RAM） 存储容量:256K（32K x 8） 速度:45ns 接口:并联 电压 - 电源:2.7 V ~ 3.6 V 工作温度:0°C ~ 70°C（TA） 封装/外壳:48-LFBGA 供应商器件封装:48-FBGA（8x8） 标准包装:348 |
| MR256DL08BMA45R | 功能描述:IC MRAM 256KBIT 45NS 48FBGA 制造商:everspin technologies inc. 系列:- 包装:剪切带（CT） 零件状态:有效 格式 - 存储器:RAM 存储器类型:MRAM（磁阻 RAM） 存储容量:256K（32K x 8） 速度:45ns 接口:并联 电压 - 电源:2.7 V ~ 3.6 V 工作温度:0°C ~ 70°C（TA） 封装/外壳:48-LFBGA 供应商器件封装:48-FBGA（8x8） 标准包装:1 |
| MR25B-100R-F | 制造商:RF 功能描述:RESISTOR, METAL FILM, 0.25 W, 1 %, 100 PPM, 100 OHM, THROUGH HOLE MOUNT, BULK 制造商:RF Electronics Inc. 功能描述:RESISTOR, METAL FILM, 0.25 W, 1 %, 100 PPM, 100 OHM, THROUGH HOLE MOUNT, BULK |
| MR25B-10K0-F | 制造商:RFE INTERNATIONAL INC 功能描述:RESISTOR, METAL FILM, 0.25 W, 1 %, 100 PPM, 10K OHM, THROUGH HOLE MOUNT, BULK |
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