参数资料
| 型号： | MR2A08ACMA35 |
| 厂商： | Everspin Technologies Inc |
| 文件页数： | 4/14页 |
| 文件大小： | 0K |
| 描述： | IC MRAM 4MBIT 35NS 48BGA |
| 标准包装： | 348 |
| 格式 - 存储器： | RAM |
| 存储器类型： | MRAM（磁阻 RAM） |
| 存储容量： | 4M (512K x 8) |
| 速度： | 35ns |
| 接口： | 并联 |
| 电源电压： | 3 V ~ 3.6 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 48-LFBGA |
| 供应商设备封装： | 48-FBGA（8x8） |
| 包装： | 托盘 |
| 其它名称： | 819-1034 |
MR2A08A
2. ELECTRICAL SPECIFICATIONS
Absolute Maximum Ratings
This device contains circuitry to protect the inputs against damage caused by high static voltages or electric fields; however, it is advised that
normal precautions be taken to avoid application of any voltage greater than maximum rated voltages to these high-impedance (Hi-Z) circuits.
The device also contains protection against external magnetic fields. Precautions should be taken to avoid application of any magnetic field
more intense than the maximum field intensity specified in the maximum ratings.
Table 2.1 Absolute Maximum Ratings 1
Symbol
V DD
V IN
I OUT
P D
Parameter
Supply voltage 2
Voltage on any pin 2
Output current per pin
Package power dissipation 3
Temp Range
-
-
-
-
Package
-
-
-
Note 3
Value
-0.5 to 4.0
-0.5 to V DD + 0.5
±20
0.600
Unit
V
V
mA
W
Commercial
-
-10 to 85
T BIAS
Temperature under bias
Industrial
-
-45 to 95
°C
AEC-Q100 Grade 1
-
-45 to 130
T stg
T Lead
Storage Temperature
Lead temperature during solder
(3 minute max)
-
-
-
-
-55 to 150
260
°C
°C
Commercial
TSOP2, BGA
2,000
H max_write
Maximum magnetic field during
write
Industrial
BGA
TSOP2
2,000
10,000
A/m
AEC-Q100 Grade 1
Commercial
TSOP2
TSOP2, BGA
2,000
8,000
H max_read
Maximum magnetic field during
read or standby
Industrial
BGA
TSOP2
8,000
10,000
A/m
Notes:
AEC-Q100 Grade 1
TSOP2
8,000
1.
2.
3.
Permanent device damage may occur if absolute maximum ratings are exceeded. Functional operation should be restricted
to recommended operating conditions. Exposure to excessive voltages or magnetic fields could affect device reliability.
All voltages are referenced to V SS .
Power dissipation capability depends on package characteristics and use environment.
Everspin Technologies ? 2012
4
MR2A08A Rev. 6, 8/2012
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MR2A08ACMA35R | 功能描述:NVRAM 4Mb 3.3V 35ns 512Kx8 Parallel MRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| MR2A08ACTS35C | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM |
| MR2A08ACYS35 | 功能描述:NVRAM 4Mb 3.3V 35ns 512Kx8 Parallel MRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| MR2A08ACYS35R | 功能描述:NVRAM 4Mb 3.3V 35ns 512Kx8 Parallel MRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| MR2A08AMA35 | 功能描述:NVRAM 4Mb 3.3V 35ns 512Kx8 Parallel MRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
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