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参数资料
| 型号： | MR3025G |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 整流器 |
| 英文描述： | 25 A, 250 V, SILICON, RECTIFIER DIODE |
| 封装： | MICRODE BUTTON, 2 PIN |
| 文件页数： | 1/7页 |
| 文件大小： | 104K |
| 代理商： | MR3025G |
Semiconductor Components Industries, LLC, 2000
October, 2000 Rev. 1
605
Publication Order Number:
TRA2525/D
TRA2525, MR3025
MediumCurrent Silicon
Rectifiers
250 Volts, 25 Amperes
Compact, highly efficient silicon rectifiers for mediumcurrent
applications requiring:
High Current Surge — 400 Amperes @ TJ = 175°C
Peak Performance @ Elevated Temperature — 25 Amperes
Low Cost
Compact, Molded Package for Optimum Efficiency in a Small Case
Configuration
Mechanical Characteristics
Finish: All External Surfaces are Corrosion Resistant, and Contact
Areas are Readily Solderable
Polarity: Indicated by Cathode Band
Weight: 1.8 Grams (Approximately)
Maximum Temperature for Soldering Purposes: 260°C
Marking: 2525 or MR3025
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
DC Blocking Voltage
VR
250
Volts
NonRepetitive Peak Reverse Voltage
(Halfwave, Single Phase, 60 Hz)
VRSM
310
Volts
Average Forward Current
(Single Phase, Resistive Load,
TC = 150°C)
IO
25
Amps
NonRepetitive Peak Surge Current
(Halfwave, Single Phase, 60 Hz)
IFSM
400
Amps
Operating Junction Temperature Range
TJ
65 to
+175
°C
Storage Temperature Range
Tstg
65 to
+175
°C
Device
Package
Shipping
ORDERING INFORMATION
TRA2525
http://onsemi.com
MR3025
Microde Button
5000 Units/Box
Microde Button
5000 Units/Box
MICRODE BUTTON
CASE 193
MARKING DIAGRAM
2525
= Device Code
L
= Location Code
YY
= Year
WW
= Work Week
2525 LYYWW
MARKING DIAGRAM
MR3025 = Device Code
L
= Location Code
YY
= Year
WW
= Work Week
MR3025 YYWWL
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