参数资料
型号: MR752G
厂商: ON Semiconductor
文件页数: 3/7页
文件大小: 96K
描述: DIODE STD REC 6A 200V AXIAL
产品变化通告: Product Discontinuation 21/Jun/2007
标准包装: 1,000
二极管类型: 标准
电压 - (Vr)(最大): 200V
电流 - 平均整流 (Io): 6A
电压 - 在 If 时为正向 (Vf)(最大): 900mV @ 6A
速度: 标准恢复 >500ns,> 200mA(Io)
电流 - 在 Vr 时反向漏电: 25µA @ 200V
安装类型: 通孔
封装/外壳: 按钮,轴向
供应商设备封装: Microde 按钮
包装: 散装
MR750 SERIES
http://onsemi.com
3
Figure 1. Forward Voltage
Figure 2. Maximum Surge Capability
Figure 3. Forward Voltage Temperature Coefficient
Figure 4. Typical Transient Thermal Resistance
0.8 1.0 1.4 1.6 2.0 2.21.8 2.4
0.6
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
700
500
20
50
10
i
F
, INSTANTANEOUS FORWARD CURRENT (AMP)
5.0
2.0
1.0
1.2
2.6
7.0
100
70
0.2
0.5
0.7
200
30
3.0
0.3
300
MAXIMUM
TYPICAL
TJ
= 25
°C
NUMBER OF CYCLES AT 60 Hz
100
60
1.0
300
100
80
I
2.0 5.0 10 20 50
200
400
600
, PEAK HALF WAVE CURRENT (AMP)
FSM
TJ
= 175
°C
25°C
VRRM
MAY BE APPLIED BETWEEN
EACH CYCLE OF SURGE. THE TJ
NOTED IS TJ
PRIOR TO SURGE
iF, INSTANTANEOUS FORWARD CURRENT (AMP)
0.5 5.0 501.0
?2.0
0.2
+0.5
0
?0.5
?1.0
?1.5
2.0
°
COEFFICIENT (mV/ C)
10 20 100 200
TYPICAL RANGE
t, TIME (SECONDS)
0.1 0.2 0.3 0.5 0.7 3.0 301.0
7.0 70
10
1.0
0.2
2.0 5.0 10 20 50
5.0
20
R
3.0
2.0
0.5
0.3
Both leads to heat sink, with lengths as shown. Variations in RJL(t)
below 2.0 seconds are independent of lead connections of 1/8 inch
or greater, and vary only about ±20% from the values shown. Val-
ues for times greater than 2.0 seconds may be obtained by drawing
a curve, with the end point (at 70 seconds) taken from Figure 8, or
calculated from the notes, using the given curves as a guide. Either
typical or maximum values may be used. For RJL(t)values at pulse
widths less than 0.1 second, the above curve can be extrapolated
down to 10 s at a continuing slope.
THERMAL RESISTANCE ( C/W)
175°C
25°C
1/2"
3/8"
1/4"
1/8"
, JUNCTION?TO?LEAD TRANSIENT
JL(t)
θ
°
HEAT SINK
L
L
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