参数资料
型号: MR754G
厂商: ON Semiconductor
文件页数: 2/7页
文件大小: 96K
描述: DIODE STD REC 6A 400V AXIAL
产品变化通告: Product Discontinuation 21/Jun/2007
标准包装: 1,000
二极管类型: 标准
电压 - (Vr)(最大): 400V
电流 - 平均整流 (Io): 6A
电压 - 在 If 时为正向 (Vf)(最大): 900mV @ 6A
速度: 标准恢复 >500ns,> 200mA(Io)
电流 - 在 Vr 时反向漏电: 25µA @ 400V
安装类型: 通孔
封装/外壳: 按钮,轴向
供应商设备封装: Microde 按钮
包装: 散装
其它名称: MR754GOS
MR750 SERIES
http://onsemi.com
2
MAXIMUM RATINGS
Characteristic
Symbol
MR750
MR751
MR752
MR754
MR756
MR760
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
100
200
400
600
1000
V
Non?Repetitive Peak Reverse Voltage
(Halfwave, single phase, 60 Hz peak)
VRSM
60
120
240
480
720
1200
V
RMS Reverse Voltage
VR(RMS)
35
70
140
280
420
700
V
Average Rectified Forward Current
(Single phase, resistive load, 60 Hz)
(See Figures 5 and 6)
IO
22 (TL
= 60
°C, 1/8 in Lead Lengths)
6.0 (TA
= 60
°C, P.C. Board mounting)
A
Non?Repetitive Peak Surge Current
(Surge applied at rated load conditions)
IFSM
400 (for 1 cycle)
A
Operating and Storage Junction
Temperature Range
TJ, Tstg
65 to +175
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
ELECTRICAL CHARACTERISTICS
Characteristic and Conditions
Symbol
Max
Unit
Maximum Instantaneous Forward Voltage Drop (iF
= 100 A, T
J
= 25
°C)
vF
1.25
V
Maximum Forward Voltage Drop (IF
= 6.0 A, T
A
= 25
°C, 3/8 in leads)
VF
0.90
V
Maximum Reverse Current TJ
= 25
°C
(Rated DC Voltage) TJ
= 100
°C
IR
25
1.0
A
mA
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