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| 型号： | MRA4003T3G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 96K |
| 描述： | DIODE STD REC 1A 300V SMA |
| 产品目录绘图： | Rectifier SMA Pkg |
| 标准包装： | 10 |
| 二极管类型： | 标准 |
| 电压 - (Vr)（最大）： | 300V |
| 电流 - 平均整流 (Io)： | 1A |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 1.1V @ 1A |
| 速度： | 标准恢复 >500ns，> 200mA（Io） |
| 电流 - 在 Vr 时反向漏电： | 10µA @ 300V |
| 安装类型： | 表面贴装 |
| 封装/外壳： | DO-214AC，SMA |
| 供应商设备封装： | SMA |
| 包装： | 标准包装 |
| 产品目录页面： | 1565 (CN2011-ZH PDF) |
| 其它名称： | MRA4003T3GOSDKR |
      MRA4003T3G Series, NRVA4003T3G Series http://onsemi.com 2 MAXIMUM RATINGS Rating Symbol Value Unit MRA4003 MRA4004/ NRVA4004 MRA4005/ NRVA4005 MRA4006/ NRVA4006 MRA4007/ NRVA4007 Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V V RRM RWM VR 300 400 600 800 1000 Volts Avg. Rectified Forward Current (At Rated VR, TL = 150 °C) IO 1 Amp Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz, TL = 150 °C) IFRM 2 Amps Non?Repetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 60 Hz) IFSM 30 Amps Storage/Operating Case Temperature Tstg, TC ?55 to 150 °C Operating Junction Temperature TJ ?55 to 175 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above t he Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, Junction?to?Lead (Note 1) Thermal Resistance, Junction?to?Ambient (Note 2) Rθ R JL θJA 16.2 88.3 °C/W ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit TJ = 25 °C TJ = 100 °C Maximum Instantaneous Forward Voltage (Note 3) (IF = 1 A) (IF = 2 A) VF 1.1 1.18 1.04 1.12 Volts Maximum Instantaneous Reverse Current (at rated DC voltage) IR 10 50 A 1. Minimum Pad Size 2. 1 inch Pad Size 3. Pulse Test: Pulse Width ≤ 250 s, Duty Cycle ≤ 2%. Figure 1. Typical Forward Voltage VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 10 1.0 0.1 1.2 1.0 0.8 0.6 0.4 I F , INSTANTANEOUS FORWARD CURRENT (AMP S Figure 2. Typical Reverse Current VR, REVERSE VOLTAGE (VOLTS) 400 350 300 250 200 150 100 50 ?9 0 I R , REVERSE CURRENT (AMPS) 1.0E 0.01 10E?9 100E?9 1.0E?6 10E?6 100E?6 TJ = 150 °C 100°C 25°C ?40°C TJ = 150 °C 100°C 25°C |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRA4003T3G | 制造商:ON Semiconductor 功能描述:Schottky Rectifier |
| MRA4004 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Surface Mount Standard Recovery Power Rectifier |
| MRA4004T3 | 功能描述:整流器 400V 1A Standard RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| MRA4004T3G | 功能描述:整流器 400V 1A Standard RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| MRA4004T3G | 制造商:ON Semiconductor 功能描述:Schottky Rectifier |
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